%0 Journal Article
%A Wang, Yi-Ze
%A Liu, Chang
%A Cai, Jian-Hui
%A Liu, Qiang
%A Liu, Xin-Ke
%A Yu, Wen-Jie
%T Experimental I – V and C – V Analysis of Schottky-Barrier Metal-Oxide-Semiconductor Field Effect Transistors with Epitaxial NiSi 2 Contacts and Dopant Segregation
%J Chinese physics letters
%V 34
%N 7
%@ 1741-3540
%C Bristol
%I IOP Publ.
%M FZJ-2019-00032
%P 078501 -
%D 2017
%X We present an experimental analysis of Schottky-barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) fabricated on ultrathin body silicon-on-insulator substrates with a steep junction by the dopant implantation into the silicide process. The subthreshold swing of such SB-MOSFETs reaches 69 mV/dec. Emphasis is placed on the capacitance-voltage analysis of p-type SB-MOSFETs. According to the measurements of gate-to-source capacitance ${C}_{\mathrm{gs}}$ with respect to ${V}_{\mathrm{gs}}$ at various ${V}_{\mathrm{ds}}$, we find that a maximum occurs at the accumulation regime due to the most imbalanced charge distribution along the channel. At each ${C}_{\mathrm{gs}}$ peak, the difference between ${V}_{\mathrm{gs}}$ and ${V}_{\mathrm{ds}}$ is equal to the Schottky barrier height (SBH) for NiSi 2 on highly doped silicon, which indicates that the critical condition of channel pinching off is related with SBH for source/drain on channel. The SBH for NiSi 2 on highly doped silicon can affect the pinch-off voltage and the saturation current of SB-MOSFETs.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000410696400064
%R 10.1088/0256-307X/34/7/078501
%U https://juser.fz-juelich.de/record/859081