TY  - JOUR
AU  - Wang, Yi-Ze
AU  - Liu, Chang
AU  - Cai, Jian-Hui
AU  - Liu, Qiang
AU  - Liu, Xin-Ke
AU  - Yu, Wen-Jie
TI  - Experimental I – V and C – V Analysis of Schottky-Barrier Metal-Oxide-Semiconductor Field Effect Transistors with Epitaxial NiSi 2 Contacts and Dopant Segregation
JO  - Chinese physics letters
VL  - 34
IS  - 7
SN  - 1741-3540
CY  - Bristol
PB  - IOP Publ.
M1  - FZJ-2019-00032
SP  - 078501 -
PY  - 2017
AB  - We present an experimental analysis of Schottky-barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) fabricated on ultrathin body silicon-on-insulator substrates with a steep junction by the dopant implantation into the silicide process. The subthreshold swing of such SB-MOSFETs reaches 69 mV/dec. Emphasis is placed on the capacitance-voltage analysis of p-type SB-MOSFETs. According to the measurements of gate-to-source capacitance ${C}_{\mathrm{gs}}$ with respect to ${V}_{\mathrm{gs}}$ at various ${V}_{\mathrm{ds}}$, we find that a maximum occurs at the accumulation regime due to the most imbalanced charge distribution along the channel. At each ${C}_{\mathrm{gs}}$ peak, the difference between ${V}_{\mathrm{gs}}$ and ${V}_{\mathrm{ds}}$ is equal to the Schottky barrier height (SBH) for NiSi 2 on highly doped silicon, which indicates that the critical condition of channel pinching off is related with SBH for source/drain on channel. The SBH for NiSi 2 on highly doped silicon can affect the pinch-off voltage and the saturation current of SB-MOSFETs.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000410696400064
DO  - DOI:10.1088/0256-307X/34/7/078501
UR  - https://juser.fz-juelich.de/record/859081
ER  -