%0 Conference Paper
%A Saeidi, A.
%A Jazaeri, F.
%A Stolichnov, I.
%A Luong, G. V.
%A Mantl, Siegfried
%A Ionescu, Adrian M.
%T Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing
%I IEEE
%M FZJ-2019-00033
%P 7-8
%D 2017
%X This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of I on , g m , and overdrive are analyzed and explained by most effective reduction of body factor, m <; 1, especially for V G >V T , which greatly amplify the control on the surface potential TFET, which dictates a highly non-linear BTBT regime. We achieve a full non-hysteretic negative-capacitance switch configuration, suitable for logic applications, and report non-current increase by a factor of 500x, voltage overdrive of IV, transconductance increase of up to 5× 10 3 x, and subthreshold swing improvement.
%B 2017 Silicon Nanoelectronics Workshop (SNW)
%C 4 Jun 2017 - 5 Jun 2017, Kyoto (Japan)
Y2 4 Jun 2017 - 5 Jun 2017
M2 Kyoto, Japan
%F PUB:(DE-HGF)8
%9 Contribution to a conference proceedings
%R 10.23919/SNW.2017.8242270
%U https://juser.fz-juelich.de/record/859082