TY  - CONF
AU  - Saeidi, A.
AU  - Jazaeri, F.
AU  - Stolichnov, I.
AU  - Luong, G. V.
AU  - Mantl, Siegfried
AU  - Ionescu, Adrian M.
TI  - Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing
PB  - IEEE
M1  - FZJ-2019-00033
SP  - 7-8
PY  - 2017
AB  - This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of I on , g m , and overdrive are analyzed and explained by most effective reduction of body factor, m <; 1, especially for V G >V T , which greatly amplify the control on the surface potential TFET, which dictates a highly non-linear BTBT regime. We achieve a full non-hysteretic negative-capacitance switch configuration, suitable for logic applications, and report non-current increase by a factor of 500x, voltage overdrive of IV, transconductance increase of up to 5× 10 3 x, and subthreshold swing improvement.
T2  - 2017 Silicon Nanoelectronics Workshop (SNW)
CY  - 4 Jun 2017 - 5 Jun 2017, Kyoto (Japan)
Y2  - 4 Jun 2017 - 5 Jun 2017
M2  - Kyoto, Japan
LB  - PUB:(DE-HGF)8
DO  - DOI:10.23919/SNW.2017.8242270
UR  - https://juser.fz-juelich.de/record/859082
ER  -