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@INPROCEEDINGS{Saeidi:859082,
author = {Saeidi, A. and Jazaeri, F. and Stolichnov, I. and Luong, G.
V. and Mantl, Siegfried and Ionescu, Adrian M.},
collaboration = {Zhao, Q. T.},
title = {{N}egative capacitance tunnel {F}£{T}s: {E}xperimental
demonstration of outstanding simultaneous boosting of
on-current, transconductance, overdrive, and swing},
publisher = {IEEE},
reportid = {FZJ-2019-00033},
pages = {7-8},
year = {2017},
abstract = {This paper demonstrates and experimentally reports the
highest ever performance boosting in strained
silicon-nanowire homojunction TFETs with negative
capacitance, provided by matched PZT capacitors. Outstanding
enhancements of I on , g m , and overdrive are analyzed and
explained by most effective reduction of body factor, m <;
1, especially for V G >V T , which greatly amplify the
control on the surface potential TFET, which dictates a
highly non-linear BTBT regime. We achieve a full
non-hysteretic negative-capacitance switch configuration,
suitable for logic applications, and report non-current
increase by a factor of 500x, voltage overdrive of IV,
transconductance increase of up to 5× 10 3 x, and
subthreshold swing improvement.},
month = {Jun},
date = {2017-06-04},
organization = {2017 Silicon Nanoelectronics Workshop
(SNW), Kyoto (Japan), 4 Jun 2017 - 5
Jun 2017},
cin = {PGI-9},
cid = {I:(DE-Juel1)PGI-9-20110106},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)8},
doi = {10.23919/SNW.2017.8242270},
url = {https://juser.fz-juelich.de/record/859082},
}