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024 7 _ |a 10.23919/SNW.2017.8242270
|2 doi
037 _ _ |a FZJ-2019-00033
100 1 _ |a Saeidi, A.
|0 P:(DE-HGF)0
|b 0
|e Corresponding author
111 2 _ |a 2017 Silicon Nanoelectronics Workshop (SNW)
|c Kyoto
|d 2017-06-04 - 2017-06-05
|w Japan
245 _ _ |a Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing
260 _ _ |c 2017
|b IEEE
300 _ _ |a 7-8
336 7 _ |a CONFERENCE_PAPER
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336 7 _ |a Conference Paper
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336 7 _ |a INPROCEEDINGS
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336 7 _ |a Output Types/Conference Paper
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336 7 _ |a Contribution to a conference proceedings
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520 _ _ |a This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of I on , g m , and overdrive are analyzed and explained by most effective reduction of body factor, m <; 1, especially for V G >V T , which greatly amplify the control on the surface potential TFET, which dictates a highly non-linear BTBT regime. We achieve a full non-hysteretic negative-capacitance switch configuration, suitable for logic applications, and report non-current increase by a factor of 500x, voltage overdrive of IV, transconductance increase of up to 5× 10 3 x, and subthreshold swing improvement.
536 _ _ |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521)
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588 _ _ |a Dataset connected to CrossRef Conference
700 1 _ |a Jazaeri, F.
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700 1 _ |a Stolichnov, I.
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700 1 _ |a Luong, G. V.
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700 1 _ |a Zhao, Q. T.
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700 1 _ |a Mantl, Siegfried
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700 1 _ |a Ionescu, Adrian M.
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773 _ _ |a 10.23919/SNW.2017.8242270
856 4 _ |u https://juser.fz-juelich.de/record/859082/files/08242270.pdf
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913 1 _ |a DE-HGF
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914 1 _ |y 2018
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980 _ _ |a contrib
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980 _ _ |a UNRESTRICTED


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