| Home > Publications database > Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing > print |
| 001 | 859082 | ||
| 005 | 20210130000157.0 | ||
| 024 | 7 | _ | |a 10.23919/SNW.2017.8242270 |2 doi |
| 037 | _ | _ | |a FZJ-2019-00033 |
| 100 | 1 | _ | |a Saeidi, A. |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 111 | 2 | _ | |a 2017 Silicon Nanoelectronics Workshop (SNW) |c Kyoto |d 2017-06-04 - 2017-06-05 |w Japan |
| 245 | _ | _ | |a Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing |
| 260 | _ | _ | |c 2017 |b IEEE |
| 300 | _ | _ | |a 7-8 |
| 336 | 7 | _ | |a CONFERENCE_PAPER |2 ORCID |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
| 336 | 7 | _ | |a conferenceObject |2 DRIVER |
| 336 | 7 | _ | |a Output Types/Conference Paper |2 DataCite |
| 336 | 7 | _ | |a Contribution to a conference proceedings |b contrib |m contrib |0 PUB:(DE-HGF)8 |s 1547562069_18954 |2 PUB:(DE-HGF) |
| 520 | _ | _ | |a This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of I on , g m , and overdrive are analyzed and explained by most effective reduction of body factor, m <; 1, especially for V G >V T , which greatly amplify the control on the surface potential TFET, which dictates a highly non-linear BTBT regime. We achieve a full non-hysteretic negative-capacitance switch configuration, suitable for logic applications, and report non-current increase by a factor of 500x, voltage overdrive of IV, transconductance increase of up to 5× 10 3 x, and subthreshold swing improvement. |
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| 588 | _ | _ | |a Dataset connected to CrossRef Conference |
| 700 | 1 | _ | |a Jazaeri, F. |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Stolichnov, I. |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Luong, G. V. |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Zhao, Q. T. |0 P:(DE-Juel1)128649 |b 4 |e Collaboration author |
| 700 | 1 | _ | |a Mantl, Siegfried |0 P:(DE-Juel1)128609 |b 5 |
| 700 | 1 | _ | |a Ionescu, Adrian M. |0 P:(DE-HGF)0 |b 6 |
| 773 | _ | _ | |a 10.23919/SNW.2017.8242270 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/859082/files/08242270.pdf |y Restricted |
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| 913 | 1 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
| 914 | 1 | _ | |y 2018 |
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| 980 | _ | _ | |a UNRESTRICTED |
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