Home > Publications database > Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing > print |
001 | 859082 | ||
005 | 20210130000157.0 | ||
024 | 7 | _ | |a 10.23919/SNW.2017.8242270 |2 doi |
037 | _ | _ | |a FZJ-2019-00033 |
100 | 1 | _ | |a Saeidi, A. |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
111 | 2 | _ | |a 2017 Silicon Nanoelectronics Workshop (SNW) |c Kyoto |d 2017-06-04 - 2017-06-05 |w Japan |
245 | _ | _ | |a Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing |
260 | _ | _ | |c 2017 |b IEEE |
300 | _ | _ | |a 7-8 |
336 | 7 | _ | |a CONFERENCE_PAPER |2 ORCID |
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520 | _ | _ | |a This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of I on , g m , and overdrive are analyzed and explained by most effective reduction of body factor, m <; 1, especially for V G >V T , which greatly amplify the control on the surface potential TFET, which dictates a highly non-linear BTBT regime. We achieve a full non-hysteretic negative-capacitance switch configuration, suitable for logic applications, and report non-current increase by a factor of 500x, voltage overdrive of IV, transconductance increase of up to 5× 10 3 x, and subthreshold swing improvement. |
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700 | 1 | _ | |a Jazaeri, F. |0 P:(DE-HGF)0 |b 1 |
700 | 1 | _ | |a Stolichnov, I. |0 P:(DE-HGF)0 |b 2 |
700 | 1 | _ | |a Luong, G. V. |0 P:(DE-HGF)0 |b 3 |
700 | 1 | _ | |a Zhao, Q. T. |0 P:(DE-Juel1)128649 |b 4 |e Collaboration author |
700 | 1 | _ | |a Mantl, Siegfried |0 P:(DE-Juel1)128609 |b 5 |
700 | 1 | _ | |a Ionescu, Adrian M. |0 P:(DE-HGF)0 |b 6 |
773 | _ | _ | |a 10.23919/SNW.2017.8242270 |
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