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000859086 0247_ $$2doi$$a10.1109/ULIS.2017.7962575
000859086 037__ $$aFZJ-2019-00037
000859086 041__ $$aEnglish
000859086 1001_ $$0P:(DE-Juel1)145655$$aLiu, Linjie$$b0
000859086 1112_ $$a2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)$$cAthens$$d2017-04-03 - 2017-04-05$$wGreece
000859086 245__ $$aAnalog and RF analysis of gate all around silicon nanowire MOSFETs
000859086 260__ $$a[Piscataway, NJ]$$bIEEE$$c2017
000859086 300__ $$a1-4
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000859086 520__ $$aGate all around (GAA) nanowire MOSFETs with gate length of 130 nm were fabricated on SOI wafers. The analog performance was analyzed in terms of transconductance, output conductance, voltage gain, Early voltage and transconductance efficiency. The RF characterization showed relatively low cutoff frequency and maximum oscillation frequency. Small-signal parameters are extracted using cold FET method combined with an optimization procedure called Artificial Bee Colony (ABC) method. It proves that large parasitic capacitance and high RF output conductance are the main reasons for the degraded RF performance.
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000859086 7001_ $$0P:(DE-Juel1)165600$$aHan, Qinghua$$b1$$ufzj
000859086 7001_ $$0P:(DE-HGF)0$$aMakovejev, Sergej$$b2
000859086 7001_ $$0P:(DE-Juel1)128856$$aTrellenkamp, Stefan$$b3$$ufzj
000859086 7001_ $$0P:(DE-HGF)0$$aRaskin, Jean-Pierre$$b4
000859086 7001_ $$0P:(DE-Juel1)128609$$aMantl, Siegfried$$b5$$ufzj
000859086 7001_ $$0P:(DE-Juel1)128649$$aZhao, Qing-Tai$$b6$$eCorresponding author
000859086 773__ $$a10.1109/ULIS.2017.7962575
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000859086 9141_ $$y2018
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