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@INPROCEEDINGS{Farokhnejad:859087,
      author       = {Farokhnejad, A. and Graef, M. and Horst, F. and Liu, C. and
                      Iniguez, B. and Lime, F. and Kloes, A.},
      collaboration = {Zhao, Q. T.},
      title        = {{C}ompact modeling of intrinsic capacitances in
                      {D}ouble-{G}ate {T}unnel-{FET}s},
      publisher    = {IEEE},
      reportid     = {FZJ-2019-00038},
      pages        = {1-4},
      year         = {2017},
      abstract     = {In this paper a compact model for intrinsic capacitances
                      for Tunnel field-effect transistors (TFETs) is presented.
                      The model is derived from the carrier concentration and
                      current flowing the channel of a Si Double-Gate (DG) n-type
                      TFET. It represents a particularly good estimation of TFET
                      capacitances and the flexibility of this model makes it
                      possible to apply it for single-gate or p-type TFETs as
                      well. To verify the model, the results are compared with
                      TCAD Sentaurus simulations as well as measurement data. In
                      both case model shows satisfying results.},
      month         = {Apr},
      date          = {2017-04-03},
      organization  = {2017 Joint International EUROSOI
                       Workshop and International Conference
                       on Ultimate Integration on Silicon
                       (EUROSOI-ULIS), Athens (Greece), 3 Apr
                       2017 - 5 Apr 2017},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)8},
      doi          = {10.1109/ULIS.2017.7962584},
      url          = {https://juser.fz-juelich.de/record/859087},
}