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@INPROCEEDINGS{Farokhnejad:859087,
author = {Farokhnejad, A. and Graef, M. and Horst, F. and Liu, C. and
Iniguez, B. and Lime, F. and Kloes, A.},
collaboration = {Zhao, Q. T.},
title = {{C}ompact modeling of intrinsic capacitances in
{D}ouble-{G}ate {T}unnel-{FET}s},
publisher = {IEEE},
reportid = {FZJ-2019-00038},
pages = {1-4},
year = {2017},
abstract = {In this paper a compact model for intrinsic capacitances
for Tunnel field-effect transistors (TFETs) is presented.
The model is derived from the carrier concentration and
current flowing the channel of a Si Double-Gate (DG) n-type
TFET. It represents a particularly good estimation of TFET
capacitances and the flexibility of this model makes it
possible to apply it for single-gate or p-type TFETs as
well. To verify the model, the results are compared with
TCAD Sentaurus simulations as well as measurement data. In
both case model shows satisfying results.},
month = {Apr},
date = {2017-04-03},
organization = {2017 Joint International EUROSOI
Workshop and International Conference
on Ultimate Integration on Silicon
(EUROSOI-ULIS), Athens (Greece), 3 Apr
2017 - 5 Apr 2017},
cin = {PGI-9},
cid = {I:(DE-Juel1)PGI-9-20110106},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)8},
doi = {10.1109/ULIS.2017.7962584},
url = {https://juser.fz-juelich.de/record/859087},
}