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| 001 | 859087 | ||
| 005 | 20210130000158.0 | ||
| 024 | 7 | _ | |a 10.1109/ULIS.2017.7962584 |2 doi |
| 037 | _ | _ | |a FZJ-2019-00038 |
| 100 | 1 | _ | |a Farokhnejad, A. |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 111 | 2 | _ | |a 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) |c Athens |d 2017-04-03 - 2017-04-05 |w Greece |
| 245 | _ | _ | |a Compact modeling of intrinsic capacitances in Double-Gate Tunnel-FETs |
| 260 | _ | _ | |c 2017 |b IEEE |
| 300 | _ | _ | |a 1-4 |
| 336 | 7 | _ | |a CONFERENCE_PAPER |2 ORCID |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
| 336 | 7 | _ | |a conferenceObject |2 DRIVER |
| 336 | 7 | _ | |a Output Types/Conference Paper |2 DataCite |
| 336 | 7 | _ | |a Contribution to a conference proceedings |b contrib |m contrib |0 PUB:(DE-HGF)8 |s 1547560091_9151 |2 PUB:(DE-HGF) |
| 520 | _ | _ | |a In this paper a compact model for intrinsic capacitances for Tunnel field-effect transistors (TFETs) is presented. The model is derived from the carrier concentration and current flowing the channel of a Si Double-Gate (DG) n-type TFET. It represents a particularly good estimation of TFET capacitances and the flexibility of this model makes it possible to apply it for single-gate or p-type TFETs as well. To verify the model, the results are compared with TCAD Sentaurus simulations as well as measurement data. In both case model shows satisfying results. |
| 536 | _ | _ | |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521) |0 G:(DE-HGF)POF3-521 |c POF3-521 |f POF III |x 0 |
| 588 | _ | _ | |a Dataset connected to CrossRef Conference |
| 700 | 1 | _ | |a Graef, M. |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Horst, F. |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Liu, C. |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Zhao, Q. T. |0 P:(DE-Juel1)128649 |b 4 |e Collaboration author |
| 700 | 1 | _ | |a Iniguez, B. |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a Lime, F. |0 P:(DE-HGF)0 |b 6 |
| 700 | 1 | _ | |a Kloes, A. |0 P:(DE-HGF)0 |b 7 |
| 773 | _ | _ | |a 10.1109/ULIS.2017.7962584 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/859087/files/07962584.pdf |y Restricted |
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| 913 | 1 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
| 914 | 1 | _ | |y 2018 |
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| 980 | _ | _ | |a UNRESTRICTED |
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