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000859103 037__ $$aFZJ-2019-00047
000859103 1001_ $$0P:(DE-Juel1)165600$$aHan, Qinghua$$b0
000859103 1112_ $$a2018 IEEE Silicon Nanoelectronics Workshop$$cHonolulu$$d2018-06-17 - 2018-06-18$$wUSA
000859103 245__ $$aImpact of Traps in Ferroelectric HfYOx on Negative Capacitance MOSFETs
000859103 260__ $$c2018
000859103 3367_ $$033$$2EndNote$$aConference Paper
000859103 3367_ $$2DataCite$$aOther
000859103 3367_ $$2BibTeX$$aINPROCEEDINGS
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000859103 3367_ $$2ORCID$$aLECTURE_SPEECH
000859103 3367_ $$0PUB:(DE-HGF)6$$2PUB:(DE-HGF)$$aConference Presentation$$bconf$$mconf$$s1547546043_11586$$xOther
000859103 500__ $$aExtended Abstract
000859103 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000859103 7001_ $$0P:(DE-HGF)0$$aTromm, Thomas Carl Ulrich$$b1
000859103 7001_ $$0P:(DE-HGF)0$$aAleksa, Paulus$$b2
000859103 7001_ $$0P:(DE-Juel1)128631$$aSchubert, Jürgen$$b3
000859103 7001_ $$0P:(DE-Juel1)128609$$aMantl, Siegfried$$b4
000859103 7001_ $$0P:(DE-Juel1)128649$$aZhao, Qing-Tai$$b5$$eCorresponding author
000859103 909CO $$ooai:juser.fz-juelich.de:859103$$pVDB
000859103 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)165600$$aForschungszentrum Jülich$$b0$$kFZJ
000859103 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-HGF)0$$aForschungszentrum Jülich$$b1$$kFZJ
000859103 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-HGF)0$$aForschungszentrum Jülich$$b2$$kFZJ
000859103 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128631$$aForschungszentrum Jülich$$b3$$kFZJ
000859103 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128609$$aForschungszentrum Jülich$$b4$$kFZJ
000859103 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128649$$aForschungszentrum Jülich$$b5$$kFZJ
000859103 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000859103 9141_ $$y2018
000859103 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
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