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@INPROCEEDINGS{Han:859103,
      author       = {Han, Qinghua and Tromm, Thomas Carl Ulrich and Aleksa,
                      Paulus and Schubert, Jürgen and Mantl, Siegfried and Zhao,
                      Qing-Tai},
      title        = {{I}mpact of {T}raps in {F}erroelectric {H}f{YO}x on
                      {N}egative {C}apacitance {MOSFET}s},
      reportid     = {FZJ-2019-00047},
      year         = {2018},
      note         = {Extended Abstract},
      month         = {Jun},
      date          = {2018-06-17},
      organization  = {2018 IEEE Silicon Nanoelectronics
                       Workshop, Honolulu (USA), 17 Jun 2018 -
                       18 Jun 2018},
      subtyp        = {Other},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/859103},
}