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@ARTICLE{Nishijima:859113,
author = {Nishijima, D. and Kreter, A. and Baldwin, M. J. and
Borodin, D. and Eksaeva, A. and Hwangbo, D. and Kajita, S.
and Miyamoto, M. and Ohno, N. and Patino, M. and
Pospieszczyk, A. and Rasinski, M. and Schlummer, T. and
Terra, A. and Doerner, R. P.},
title = {{I}nfluence of heavier impurity deposition on surface
morphology development and sputtering behavior explored in
multiple linear plasma devices},
journal = {Nuclear materials and energy},
volume = {18},
issn = {2352-1791},
address = {Amsterdam [u.a.]},
publisher = {Elsevier},
reportid = {FZJ-2019-00055},
pages = {67 - 71},
year = {2019},
abstract = {Surface morphology development and sputtering behavior of
Cr, as a test material, have been explored under He plasma
exposure at a low incident ion energy of ∼80 eV in
multiple linear plasma devices: PISCES-A, PSI-2, and
NAGDIS-II. From comparison of the experiments in these
devices, deposition of a small amount of heavier impurities
(Mo in NAGDIS-II and Ta in PISCES-A) onto Cr is found to
result in the formation of cone structures on the Cr surface
due to preferential sputtering, resulting in a significant
reduction (up to ∼10 times) in the sputtering yield of Cr
due to line-of-sight redeposition onto the neighboring
cones. The heavier impurities are thought to originate from
a sample holding cap/cover, which can be sputtered by a
trace amount of intrinsic impurities (C, O, etc) as well as
by Cr ionized in the plasma. It can be concluded from the Cr
experiments, as well as additional Be data collected in
PISCES-B, that heavier impurity deposition plays a major
role in the cone structure formation, while other mechanisms
(e.g. surface irregularity and oxide) also exist.},
cin = {IEK-4},
ddc = {624},
cid = {I:(DE-Juel1)IEK-4-20101013},
pnm = {113 - Methods and Concepts for Material Development
(POF3-113)},
pid = {G:(DE-HGF)POF3-113},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000460107500013},
doi = {10.1016/j.nme.2018.12.008},
url = {https://juser.fz-juelich.de/record/859113},
}