TY  - JOUR
AU  - Kutovyi, Yurii
AU  - Zadorozhnyi, Ihor
AU  - Handziuk, Volodymyr
AU  - Hlukhova, Hanna
AU  - Boichuk, Nazarii
AU  - Petrychuk, Mykhaylo
AU  - Vitusevich, Svetlana
TI  - Liquid-Gated Two-Layer Silicon Nanowire FETs: Evidence of Controlling Single-Trap Dynamic Processes523
JO  - Nano letters
VL  - 18
IS  - 11
SN  - 1530-6992
CY  - Washington, DC
PB  - ACS Publ.
M1  - FZJ-2019-00072
SP  - 7305 - 7313
PY  - 2018
AB  - We fabricate two-layer (TL) silicon nanowires (NW) field-effect transistors (FETs) with a liquid gate. The NW devices show advanced characteristics, which reflect reliable single-electron phenomena. A strong modulation effect of channel conductivity with effectively tuned parameters is revealed. The effect opens up prospects for applications in several research fields including bioelectronics and sensing applications. Our results shed light on the nature of single trap dynamics which parameters can be fine-tuned to enhance the sensitivity of liquid-gated TL silicon nanowire FETs.
LB  - PUB:(DE-HGF)16
C6  - pmid:30346789
UR  - <Go to ISI:>//WOS:000451102100088
DO  - DOI:10.1021/acs.nanolett.8b03508
UR  - https://juser.fz-juelich.de/record/859136
ER  -