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@ARTICLE{Kutovyi:859136,
author = {Kutovyi, Yurii and Zadorozhnyi, Ihor and Handziuk,
Volodymyr and Hlukhova, Hanna and Boichuk, Nazarii and
Petrychuk, Mykhaylo and Vitusevich, Svetlana},
title = {{L}iquid-{G}ated {T}wo-{L}ayer {S}ilicon {N}anowire {FET}s:
{E}vidence of {C}ontrolling {S}ingle-{T}rap {D}ynamic
{P}rocesses523},
journal = {Nano letters},
volume = {18},
number = {11},
issn = {1530-6992},
address = {Washington, DC},
publisher = {ACS Publ.},
reportid = {FZJ-2019-00072},
pages = {7305 - 7313},
year = {2018},
abstract = {We fabricate two-layer (TL) silicon nanowires (NW)
field-effect transistors (FETs) with a liquid gate. The NW
devices show advanced characteristics, which reflect
reliable single-electron phenomena. A strong modulation
effect of channel conductivity with effectively tuned
parameters is revealed. The effect opens up prospects for
applications in several research fields including
bioelectronics and sensing applications. Our results shed
light on the nature of single trap dynamics which parameters
can be fine-tuned to enhance the sensitivity of liquid-gated
TL silicon nanowire FETs.},
cin = {ICS-8},
ddc = {660},
cid = {I:(DE-Juel1)ICS-8-20110106},
pnm = {523 - Controlling Configuration-Based Phenomena (POF3-523)},
pid = {G:(DE-HGF)POF3-523},
typ = {PUB:(DE-HGF)16},
pubmed = {pmid:30346789},
UT = {WOS:000451102100088},
doi = {10.1021/acs.nanolett.8b03508},
url = {https://juser.fz-juelich.de/record/859136},
}