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| 001 | 859136 | ||
| 005 | 20240619091241.0 | ||
| 024 | 7 | _ | |a 10.1021/acs.nanolett.8b03508 |2 doi |
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| 100 | 1 | _ | |a Kutovyi, Yurii |0 P:(DE-Juel1)167225 |b 0 |u fzj |
| 245 | _ | _ | |a Liquid-Gated Two-Layer Silicon Nanowire FETs: Evidence of Controlling Single-Trap Dynamic Processes523 |
| 260 | _ | _ | |a Washington, DC |c 2018 |b ACS Publ. |
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| 520 | _ | _ | |a We fabricate two-layer (TL) silicon nanowires (NW) field-effect transistors (FETs) with a liquid gate. The NW devices show advanced characteristics, which reflect reliable single-electron phenomena. A strong modulation effect of channel conductivity with effectively tuned parameters is revealed. The effect opens up prospects for applications in several research fields including bioelectronics and sensing applications. Our results shed light on the nature of single trap dynamics which parameters can be fine-tuned to enhance the sensitivity of liquid-gated TL silicon nanowire FETs. |
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| 700 | 1 | _ | |a Vitusevich, Svetlana |0 P:(DE-Juel1)128738 |b 6 |e Corresponding author |
| 773 | _ | _ | |a 10.1021/acs.nanolett.8b03508 |g Vol. 18, no. 11, p. 7305 - 7313 |0 PERI:(DE-600)2048866-X |n 11 |p 7305 - 7313 |t Nano letters |v 18 |y 2018 |x 1530-6992 |
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