TY  - JOUR
AU  - Stange, Daniela
AU  - von den Driesch, Nils
AU  - Zabel, Thomas
AU  - Armand-Pilon, Francesco
AU  - Rainko, Denis
AU  - Marzban, Bahareh
AU  - Zaumseil, Peter
AU  - Hartmann, Jean-Michel
AU  - Ikonic, Zoran
AU  - Capellini, Giovanni
AU  - Mantl, Siegfried
AU  - Sigg, Hans
AU  - Witzens, Jeremy
AU  - Grützmacher, Detlev
AU  - Buca, Dan Mihai
TI  - GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers
JO  - ACS photonics
VL  - 5
IS  - 11
SN  - 2330-4022
CY  - Washington, DC
PB  - ACS
M1  - FZJ-2019-00200
SP  - 4628 - 4636
PY  - 2018
AB  - GeSn and SiGeSn are promising materials for the fabrication of a group IV laser source offering a number of design options from bulk to heterostructures and quantum wells. Here, we investigate GeSn/SiGeSn multi quantum wells using the optically pumped laser effect. Three complex heterostructures were grown on top of 200 nm thick strain-relaxed Ge0.9Sn0.1 buffers. The lasing is investigated in terms of threshold and maximal lasing operation temperature by comparing multiple quantum well to double heterostructure samples. Pumping under two different wavelengths of 1064 and 1550 nm yields comparable lasing thresholds. The design with multi quantum wells reduces the lasing threshold to 40 ± 5 kW/cm2 at 20 K, almost 10 times lower than for bulk structures. Moreover, 20 K higher maximal lasing temperatures were found for lower energy pumping of 1550 nm.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000451496500056
DO  - DOI:10.1021/acsphotonics.8b01116
UR  - https://juser.fz-juelich.de/record/859332
ER  -