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@ARTICLE{Stange:859332,
      author       = {Stange, Daniela and von den Driesch, Nils and Zabel, Thomas
                      and Armand-Pilon, Francesco and Rainko, Denis and Marzban,
                      Bahareh and Zaumseil, Peter and Hartmann, Jean-Michel and
                      Ikonic, Zoran and Capellini, Giovanni and Mantl, Siegfried
                      and Sigg, Hans and Witzens, Jeremy and Grützmacher, Detlev
                      and Buca, Dan Mihai},
      title        = {{G}e{S}n/{S}i{G}e{S}n {H}eterostructure and {M}ulti
                      {Q}uantum {W}ell {L}asers},
      journal      = {ACS photonics},
      volume       = {5},
      number       = {11},
      issn         = {2330-4022},
      address      = {Washington, DC},
      publisher    = {ACS},
      reportid     = {FZJ-2019-00200},
      pages        = {4628 - 4636},
      year         = {2018},
      abstract     = {GeSn and SiGeSn are promising materials for the fabrication
                      of a group IV laser source offering a number of design
                      options from bulk to heterostructures and quantum wells.
                      Here, we investigate GeSn/SiGeSn multi quantum wells using
                      the optically pumped laser effect. Three complex
                      heterostructures were grown on top of 200 nm thick
                      strain-relaxed Ge0.9Sn0.1 buffers. The lasing is
                      investigated in terms of threshold and maximal lasing
                      operation temperature by comparing multiple quantum well to
                      double heterostructure samples. Pumping under two different
                      wavelengths of 1064 and 1550 nm yields comparable lasing
                      thresholds. The design with multi quantum wells reduces the
                      lasing threshold to 40 ± 5 kW/cm2 at 20 K, almost 10 times
                      lower than for bulk structures. Moreover, 20 K higher
                      maximal lasing temperatures were found for lower energy
                      pumping of 1550 nm.},
      cin          = {PGI-9 / JARA-FIT / PGI-10},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-10-20170113},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000451496500056},
      doi          = {10.1021/acsphotonics.8b01116},
      url          = {https://juser.fz-juelich.de/record/859332},
}