Epitaxy of Direct Bandgap Group IV Si-Ge-Sn Alloys towards Heterostructure Light Emitters - JuSER

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Home > Publications database > Epitaxy of Direct Bandgap Group IV Si-Ge-Sn Alloys towards Heterostructure Light Emitters

Conference Presentation (Invited)

Epitaxy of Direct Bandgap Group IV Si-Ge-Sn Alloys towards Heterostructure Light Emitters

von den Driesch, N. (Corresponding author)FZJ* ; Stange, D.FZJ* ; Rainko, D.FZJ* ; Povstugar, I.FZJ* ; Breuer, U.FZJ* ; Ikonic, Z. ; Hartmann, J.-M. ; Schubert, M. A. ; Capellini, G. ; Sigg, H. ; Mantl, S.FZJ* ; Buca, D. M.FZJ* ; Grützmacher, D.FZJ*

2018

AiMES 2018, ECS and SMEQ Joint International Meeting, Cancun, Mexico, 30 Sep 2018 - 4 Oct 2018

Contributing Institute(s):

Research Program(s):

521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2018

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Document types > Presentations > Conference Presentations
JARA > JARA > JARA-JARA\-FIT
Institute Collections > ZEA > ZEA-3
Institute Collections > PGI > PGI-10
Institute Collections > PGI > PGI-9
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Record created 2019-01-14, last modified 2021-01-30

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