%0 Journal Article
%A Chandrasena, R. U.
%A Flint, C. L.
%A Arab, Arian
%A Nemsak, Slavomir
%A Gehlmann, M.
%A Özdöl, V. B.
%A Bisti, F.
%A Wijesekara, K. D.
%A Meyer-Ilse, J.
%A Gullikson, E.
%A Arenholz, E.
%A Ciston, J.
%A Schneider, C. M.
%A Strocov, V. N.
%A Suzuki, Y.
%A Gray, A. X.
%Y Yang, W.
%T Depth-resolved charge reconstruction at the LaNi O 3 / CaMn O 3 interface
%J Physical review / B
%V 98
%N 15
%@ 2469-9950
%C Woodbury, NY
%I Inst.
%M FZJ-2019-00556
%P 155103
%D 2018
%X Rational design of low-dimensional electronic phenomena at oxide interfaces is currently considered to be one of the most promising schemes for realizing new energy-efficient logic and memory devices. An atomically abrupt interface between paramagnetic LaNiO3 and antiferromagnetic CaMnO3 exhibits interfacial ferromagnetism, which can be tuned via a thickness-dependent metal-insulator transition in LaNiO3. Once fully understood, such emergent functionality could turn this archetypal Mott-interface system into a key building block for the above-mentioned future devices. Here, we use depth-resolved standing-wave photoemission spectroscopy in conjunction with scanning transmission electron microscopy and x-ray absorption spectroscopy, to demonstrate a depth-dependent charge reconstruction at the LaNiO3/CaMnO3 interface. Our measurements reveal an increased concentration of Mn3+ and Ni2+ cations at the interface, which create an electronic environment favorable for the emergence of interfacial ferromagnetism mediated via the Mn4+−Mn3+ ferromagnetic double exchange and Ni2+−O−Mn4+ superexchange mechanisms. Our findings suggest a strategy for designing functional Mott oxide heterostructures by tuning the interfacial cation characteristics via controlled manipulation of thickness, strain, and ionic defect states.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000446136000003
%R 10.1103/PhysRevB.98.155103
%U https://juser.fz-juelich.de/record/859719