TY  - JOUR
AU  - Chandrasena, R. U.
AU  - Flint, C. L.
AU  - Arab, Arian
AU  - Nemsak, Slavomir
AU  - Gehlmann, M.
AU  - Özdöl, V. B.
AU  - Bisti, F.
AU  - Wijesekara, K. D.
AU  - Meyer-Ilse, J.
AU  - Gullikson, E.
AU  - Arenholz, E.
AU  - Ciston, J.
AU  - Schneider, C. M.
AU  - Strocov, V. N.
AU  - Suzuki, Y.
AU  - Gray, A. X.
A3  - Yang, W.
TI  - Depth-resolved charge reconstruction at the LaNi O 3 / CaMn O 3 interface
JO  - Physical review / B
VL  - 98
IS  - 15
SN  - 2469-9950
CY  - Woodbury, NY
PB  - Inst.
M1  - FZJ-2019-00556
SP  - 155103
PY  - 2018
AB  - Rational design of low-dimensional electronic phenomena at oxide interfaces is currently considered to be one of the most promising schemes for realizing new energy-efficient logic and memory devices. An atomically abrupt interface between paramagnetic LaNiO3 and antiferromagnetic CaMnO3 exhibits interfacial ferromagnetism, which can be tuned via a thickness-dependent metal-insulator transition in LaNiO3. Once fully understood, such emergent functionality could turn this archetypal Mott-interface system into a key building block for the above-mentioned future devices. Here, we use depth-resolved standing-wave photoemission spectroscopy in conjunction with scanning transmission electron microscopy and x-ray absorption spectroscopy, to demonstrate a depth-dependent charge reconstruction at the LaNiO3/CaMnO3 interface. Our measurements reveal an increased concentration of Mn3+ and Ni2+ cations at the interface, which create an electronic environment favorable for the emergence of interfacial ferromagnetism mediated via the Mn4+−Mn3+ ferromagnetic double exchange and Ni2+−O−Mn4+ superexchange mechanisms. Our findings suggest a strategy for designing functional Mott oxide heterostructures by tuning the interfacial cation characteristics via controlled manipulation of thickness, strain, and ionic defect states.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000446136000003
DO  - DOI:10.1103/PhysRevB.98.155103
UR  - https://juser.fz-juelich.de/record/859719
ER  -