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@ARTICLE{Chandrasena:859719,
      author       = {Chandrasena, R. U. and Flint, C. L. and Arab, Arian and
                      Nemsak, Slavomir and Gehlmann, M. and Özdöl, V. B. and
                      Bisti, F. and Wijesekara, K. D. and Meyer-Ilse, J. and
                      Gullikson, E. and Arenholz, E. and Ciston, J. and Schneider,
                      C. M. and Strocov, V. N. and Suzuki, Y. and Gray, A. X.},
      editor       = {Yang, W.},
      title        = {{D}epth-resolved charge reconstruction at the {L}a{N}i {O}
                      3 / {C}a{M}n {O} 3 interface},
      journal      = {Physical review / B},
      volume       = {98},
      number       = {15},
      issn         = {2469-9950},
      address      = {Woodbury, NY},
      publisher    = {Inst.},
      reportid     = {FZJ-2019-00556},
      pages        = {155103},
      year         = {2018},
      abstract     = {Rational design of low-dimensional electronic phenomena at
                      oxide interfaces is currently considered to be one of the
                      most promising schemes for realizing new energy-efficient
                      logic and memory devices. An atomically abrupt interface
                      between paramagnetic LaNiO3 and antiferromagnetic CaMnO3
                      exhibits interfacial ferromagnetism, which can be tuned via
                      a thickness-dependent metal-insulator transition in LaNiO3.
                      Once fully understood, such emergent functionality could
                      turn this archetypal Mott-interface system into a key
                      building block for the above-mentioned future devices. Here,
                      we use depth-resolved standing-wave photoemission
                      spectroscopy in conjunction with scanning transmission
                      electron microscopy and x-ray absorption spectroscopy, to
                      demonstrate a depth-dependent charge reconstruction at the
                      LaNiO3/CaMnO3 interface. Our measurements reveal an
                      increased concentration of Mn3+ and Ni2+ cations at the
                      interface, which create an electronic environment favorable
                      for the emergence of interfacial ferromagnetism mediated via
                      the Mn4+−Mn3+ ferromagnetic double exchange and
                      Ni2+−O−Mn4+ superexchange mechanisms. Our findings
                      suggest a strategy for designing functional Mott oxide
                      heterostructures by tuning the interfacial cation
                      characteristics via controlled manipulation of thickness,
                      strain, and ionic defect states.},
      cin          = {PGI-6},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-6-20110106},
      pnm          = {522 - Controlling Spin-Based Phenomena (POF3-522)},
      pid          = {G:(DE-HGF)POF3-522},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000446136000003},
      doi          = {10.1103/PhysRevB.98.155103},
      url          = {https://juser.fz-juelich.de/record/859719},
}