000859721 001__ 859721
000859721 005__ 20210130000354.0
000859721 0247_ $$2doi$$a10.1063/1.5022379
000859721 0247_ $$2Handle$$a2128/21334
000859721 0247_ $$2WOS$$aWOS:000433944800007
000859721 0247_ $$2altmetric$$aaltmetric:39081800
000859721 037__ $$aFZJ-2019-00558
000859721 082__ $$a600
000859721 1001_ $$00000-0003-3174-2691$$aConti, G.$$b0
000859721 245__ $$aCharacterization of free-standing InAs quantum membranes by standing wave hard x-ray photoemission spectroscopy
000859721 260__ $$aMelville, NY$$bAIP Publ.$$c2018
000859721 3367_ $$2DRIVER$$aarticle
000859721 3367_ $$2DataCite$$aOutput Types/Journal article
000859721 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1548142034_13649
000859721 3367_ $$2BibTeX$$aARTICLE
000859721 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000859721 3367_ $$00$$2EndNote$$aJournal Article
000859721 520__ $$aFree-standing nanoribbons of InAs quantum membranes (QMs) transferred onto a (Si/Mo) multilayer mirror substrate are characterized by hard x-ray photoemission spectroscopy (HXPS) and by standing-wave HXPS (SW-HXPS). Information on the chemical composition and on the chemical states of the elements within the nanoribbons was obtained by HXPS and on the quantitative depth profiles by SW-HXPS. By comparing the experimental SW-HXPS rocking curves to x-ray optical calculations, the chemical depth profile of the InAs(QM) and its interfaces were quantitatively derived with ångström precision. We determined that (i) the exposure to air induced the formation of an InAsO4 layer on top of the stoichiometric InAs(QM); (ii) the top interface between the air-side InAsO4 and the InAs(QM) is not sharp, indicating that interdiffusion occurs between these two layers; (iii) the bottom interface between the InAs(QM) and the native oxide SiO2 on top of the (Si/Mo) substrate is abrupt. In addition, the valence band offset (VBO) between the InAs(QM) and the SiO2/(Si/Mo) substrate was determined by HXPS. The value of VBO = 0.2 ± 0.04 eV is in good agreement with literature results obtained by electrical characterization, giving a clear indication of the formation of a well-defined and abrupt InAs/SiO2 heterojunction. We have demonstrated that HXPS and SW-HXPS are non-destructive, powerful methods for characterizing interfaces and for providing chemical depth profiles of nanostructures, quantum membranes, and 2D layered materials.
000859721 536__ $$0G:(DE-HGF)POF3-522$$a522 - Controlling Spin-Based Phenomena (POF3-522)$$cPOF3-522$$fPOF III$$x0
000859721 588__ $$aDataset connected to CrossRef
000859721 7001_ $$0P:(DE-Juel1)164137$$aNemsak, Slavomir$$b1$$eCorresponding author
000859721 7001_ $$00000-0001-7721-6481$$aKuo, C.-T.$$b2
000859721 7001_ $$0P:(DE-Juel1)161368$$aGehlmann, M.$$b3
000859721 7001_ $$0P:(DE-HGF)0$$aConlon, C.$$b4
000859721 7001_ $$0P:(DE-HGF)0$$aKeqi, A.$$b5
000859721 7001_ $$0P:(DE-HGF)0$$aRattanachata, A.$$b6
000859721 7001_ $$00000-0003-4018-4572$$aKarslıoğlu, O.$$b7
000859721 7001_ $$0P:(DE-HGF)0$$aMueller, J.$$b8
000859721 7001_ $$0P:(DE-HGF)0$$aSethian, J.$$b9
000859721 7001_ $$0P:(DE-Juel1)172019$$aBluhm, H.$$b10
000859721 7001_ $$0P:(DE-HGF)0$$aRault, J. E.$$b11
000859721 7001_ $$00000-0003-3594-918X$$aRueff, J. P.$$b12
000859721 7001_ $$0P:(DE-HGF)0$$aFang, H.$$b13
000859721 7001_ $$0P:(DE-HGF)0$$aJavey, A.$$b14
000859721 7001_ $$0P:(DE-HGF)0$$aFadley, C. S.$$b15
000859721 773__ $$0PERI:(DE-600)2722985-3$$a10.1063/1.5022379$$gVol. 6, no. 5, p. 058101 -$$n5$$p058101 -$$tAPL materials$$v6$$x2166-532X$$y2018
000859721 8564_ $$uhttps://juser.fz-juelich.de/record/859721/files/1.5022379.pdf$$yOpenAccess
000859721 8564_ $$uhttps://juser.fz-juelich.de/record/859721/files/1.5022379.pdf?subformat=pdfa$$xpdfa$$yOpenAccess
000859721 909CO $$ooai:juser.fz-juelich.de:859721$$pdnbdelivery$$pdriver$$pVDB$$popen_access$$popenaire
000859721 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)164137$$aForschungszentrum Jülich$$b1$$kFZJ
000859721 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)172019$$aForschungszentrum Jülich$$b10$$kFZJ
000859721 9131_ $$0G:(DE-HGF)POF3-522$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Spin-Based Phenomena$$x0
000859721 9141_ $$y2018
000859721 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000859721 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology
000859721 915__ $$0LIC:(DE-HGF)CCBY4$$2HGFVOC$$aCreative Commons Attribution CC BY 4.0
000859721 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bAPL MATER : 2017
000859721 915__ $$0StatID:(DE-HGF)0501$$2StatID$$aDBCoverage$$bDOAJ Seal
000859721 915__ $$0StatID:(DE-HGF)0500$$2StatID$$aDBCoverage$$bDOAJ
000859721 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000859721 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000859721 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000859721 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000859721 915__ $$0StatID:(DE-HGF)0030$$2StatID$$aPeer Review$$bDOAJ : Peer review
000859721 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000859721 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000859721 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bClarivate Analytics Master Journal List
000859721 920__ $$lyes
000859721 9201_ $$0I:(DE-Juel1)PGI-6-20110106$$kPGI-6$$lElektronische Eigenschaften$$x0
000859721 980__ $$ajournal
000859721 980__ $$aVDB
000859721 980__ $$aUNRESTRICTED
000859721 980__ $$aI:(DE-Juel1)PGI-6-20110106
000859721 9801_ $$aFullTexts