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@ARTICLE{Conti:859721,
      author       = {Conti, G. and Nemsak, Slavomir and Kuo, C.-T. and Gehlmann,
                      M. and Conlon, C. and Keqi, A. and Rattanachata, A. and
                      Karslıoğlu, O. and Mueller, J. and Sethian, J. and Bluhm,
                      H. and Rault, J. E. and Rueff, J. P. and Fang, H. and Javey,
                      A. and Fadley, C. S.},
      title        = {{C}haracterization of free-standing {I}n{A}s quantum
                      membranes by standing wave hard x-ray photoemission
                      spectroscopy},
      journal      = {APL materials},
      volume       = {6},
      number       = {5},
      issn         = {2166-532X},
      address      = {Melville, NY},
      publisher    = {AIP Publ.},
      reportid     = {FZJ-2019-00558},
      pages        = {058101 -},
      year         = {2018},
      abstract     = {Free-standing nanoribbons of InAs quantum membranes (QMs)
                      transferred onto a (Si/Mo) multilayer mirror substrate are
                      characterized by hard x-ray photoemission spectroscopy
                      (HXPS) and by standing-wave HXPS (SW-HXPS). Information on
                      the chemical composition and on the chemical states of the
                      elements within the nanoribbons was obtained by HXPS and on
                      the quantitative depth profiles by SW-HXPS. By comparing the
                      experimental SW-HXPS rocking curves to x-ray optical
                      calculations, the chemical depth profile of the InAs(QM) and
                      its interfaces were quantitatively derived with ångström
                      precision. We determined that (i) the exposure to air
                      induced the formation of an InAsO4 layer on top of the
                      stoichiometric InAs(QM); (ii) the top interface between the
                      air-side InAsO4 and the InAs(QM) is not sharp, indicating
                      that interdiffusion occurs between these two layers; (iii)
                      the bottom interface between the InAs(QM) and the native
                      oxide SiO2 on top of the (Si/Mo) substrate is abrupt. In
                      addition, the valence band offset (VBO) between the InAs(QM)
                      and the SiO2/(Si/Mo) substrate was determined by HXPS. The
                      value of VBO = 0.2 ± 0.04 eV is in good agreement with
                      literature results obtained by electrical characterization,
                      giving a clear indication of the formation of a well-defined
                      and abrupt InAs/SiO2 heterojunction. We have demonstrated
                      that HXPS and SW-HXPS are non-destructive, powerful methods
                      for characterizing interfaces and for providing chemical
                      depth profiles of nanostructures, quantum membranes, and 2D
                      layered materials.},
      cin          = {PGI-6},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-6-20110106},
      pnm          = {522 - Controlling Spin-Based Phenomena (POF3-522)},
      pid          = {G:(DE-HGF)POF3-522},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000433944800007},
      doi          = {10.1063/1.5022379},
      url          = {https://juser.fz-juelich.de/record/859721},
}