000859722 001__ 859722
000859722 005__ 20210130000354.0
000859722 0247_ $$2doi$$a10.1016/j.apsusc.2018.02.091
000859722 0247_ $$2ISSN$$a0169-4332
000859722 0247_ $$2ISSN$$a1873-5584
000859722 0247_ $$2WOS$$aWOS:000428294500020
000859722 037__ $$aFZJ-2019-00559
000859722 082__ $$a660
000859722 1001_ $$0P:(DE-HGF)0$$aYoshitake, Michiko$$b0$$eCorresponding author
000859722 245__ $$aThe influence of Si in Ni on the interface modification and the band alignment between Ni and alumina
000859722 260__ $$aAmsterdam$$bElsevier$$c2018
000859722 3367_ $$2DRIVER$$aarticle
000859722 3367_ $$2DataCite$$aOutput Types/Journal article
000859722 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1548142178_14471
000859722 3367_ $$2BibTeX$$aARTICLE
000859722 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000859722 3367_ $$00$$2EndNote$$aJournal Article
000859722 520__ $$aThe influence of a small amount of Si in a Ni single crystal on the interface formation between aluminum oxide and Ni has been investigated. The interface was formed by in-situ growth of the oxide by simultaneous supply of Al and oxygen onto Ni(1 1 1) in an ultrahigh vacuum chamber equipped with XPS apparatus. The oxide growth and the interface formation were compared between Si-containing Ni(1 1 1) and pure Ni(1 1 1). It was revealed that Si segregated on the surface of Ni and oxidized, forming an epitaxial thin alumino-silicate film. Valence band spectra demonstrated that the band offset between the oxide and Ni (energy level difference between the valence band top and the Fermi level) is different due to the oxidized Si segregation at the interface.
000859722 536__ $$0G:(DE-HGF)POF3-522$$a522 - Controlling Spin-Based Phenomena (POF3-522)$$cPOF3-522$$fPOF III$$x0
000859722 588__ $$aDataset connected to CrossRef
000859722 7001_ $$0P:(DE-Juel1)164137$$aNemsak, Slavomir$$b1
000859722 7001_ $$0P:(DE-HGF)0$$aSkála, Tomáš$$b2
000859722 7001_ $$00000-0001-7439-7731$$aTsud, Nataliya$$b3
000859722 7001_ $$0P:(DE-HGF)0$$aMatolín, Vladimír$$b4
000859722 7001_ $$0P:(DE-HGF)0$$aPrince, Kevin C.$$b5
000859722 773__ $$0PERI:(DE-600)2002520-8$$a10.1016/j.apsusc.2018.02.091$$gVol. 442, p. 164 - 169$$p164 - 169$$tApplied surface science$$v442$$x0169-4332$$y2018
000859722 8564_ $$uhttps://juser.fz-juelich.de/record/859722/files/1-s2.0-S0169433218304343-main.pdf$$yRestricted
000859722 8564_ $$uhttps://juser.fz-juelich.de/record/859722/files/1-s2.0-S0169433218304343-main.pdf?subformat=pdfa$$xpdfa$$yRestricted
000859722 909CO $$ooai:juser.fz-juelich.de:859722$$pVDB
000859722 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)164137$$aForschungszentrum Jülich$$b1$$kFZJ
000859722 9131_ $$0G:(DE-HGF)POF3-522$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Spin-Based Phenomena$$x0
000859722 9141_ $$y2018
000859722 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000859722 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bAPPL SURF SCI : 2017
000859722 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000859722 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000859722 915__ $$0StatID:(DE-HGF)0600$$2StatID$$aDBCoverage$$bEbsco Academic Search
000859722 915__ $$0StatID:(DE-HGF)0030$$2StatID$$aPeer Review$$bASC
000859722 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bClarivate Analytics Master Journal List
000859722 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000859722 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000859722 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000859722 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000859722 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology
000859722 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000859722 920__ $$lyes
000859722 9201_ $$0I:(DE-Juel1)PGI-6-20110106$$kPGI-6$$lElektronische Eigenschaften$$x0
000859722 980__ $$ajournal
000859722 980__ $$aVDB
000859722 980__ $$aI:(DE-Juel1)PGI-6-20110106
000859722 980__ $$aUNRESTRICTED