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@ARTICLE{Yoshitake:859722,
author = {Yoshitake, Michiko and Nemsak, Slavomir and Skála, Tomáš
and Tsud, Nataliya and Matolín, Vladimír and Prince, Kevin
C.},
title = {{T}he influence of {S}i in {N}i on the interface
modification and the band alignment between {N}i and
alumina},
journal = {Applied surface science},
volume = {442},
issn = {0169-4332},
address = {Amsterdam},
publisher = {Elsevier},
reportid = {FZJ-2019-00559},
pages = {164 - 169},
year = {2018},
abstract = {The influence of a small amount of Si in a Ni single
crystal on the interface formation between aluminum oxide
and Ni has been investigated. The interface was formed by
in-situ growth of the oxide by simultaneous supply of Al and
oxygen onto Ni(1 1 1) in an ultrahigh vacuum chamber
equipped with XPS apparatus. The oxide growth and the
interface formation were compared between Si-containing
Ni(1 1 1) and pure Ni(1 1 1). It was revealed that
Si segregated on the surface of Ni and oxidized, forming an
epitaxial thin alumino-silicate film. Valence band spectra
demonstrated that the band offset between the oxide and Ni
(energy level difference between the valence band top and
the Fermi level) is different due to the oxidized Si
segregation at the interface.},
cin = {PGI-6},
ddc = {660},
cid = {I:(DE-Juel1)PGI-6-20110106},
pnm = {522 - Controlling Spin-Based Phenomena (POF3-522)},
pid = {G:(DE-HGF)POF3-522},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000428294500020},
doi = {10.1016/j.apsusc.2018.02.091},
url = {https://juser.fz-juelich.de/record/859722},
}