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@ARTICLE{Beyer:859760,
      author       = {Beyer, Wolfhard and Andrä, Gudrun and Bergmann, Joachim
                      and Breuer, Uwe and Finger, Friedhelm and Gawlik, Annett and
                      Haas, Stefan and Lambertz, Andreas and Maier, Florian C. and
                      Nickel, Norbert H. and Zastrow, Uwe},
      title        = {{T}emperature and hydrogen diffusion length in hydrogenated
                      amorphous silicon films on glass while scanning with a
                      continuous wave laser at 532 nm wavelength},
      journal      = {Journal of applied physics},
      volume       = {124},
      number       = {15},
      issn         = {1089-7550},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2019-00597},
      pages        = {153103 -},
      year         = {2018},
      abstract     = {Rapid thermal annealing by, e.g., laser scanning of
                      hydrogenated amorphous silicon (a-Si:H) films is of interest
                      for device improvement and for development of new device
                      structures for solar cell and large area display
                      application. For well controlled annealing of such
                      multilayers, precise knowledge of temperature and/or
                      hydrogen diffusion length in the heated material is required
                      but unavailable so far. In this study, we explore the use of
                      deuterium (D) and hydrogen (H) interdiffusion during laser
                      scanning (employing a continuous wave laser at 532 nm
                      wavelength) to characterize both quantities. The evaluation
                      of temperature from hydrogen diffusion data requires
                      knowledge of the high temperature (T > 500 °C)
                      deuterium-hydrogen (D-H) interdiffusion Arrhenius parameters
                      for which, however, no experimental data exist. Using data
                      based on recent model considerations, we find for laser
                      scanning of single films on glass substrates a broad scale
                      agreement with experimental temperature data obtained by
                      measuring the silicon melting point and with calculated data
                      using a physical model as well as published work. Since D-H
                      interdiffusion measures hydrogen diffusion length and
                      temperature within the silicon films by a memory effect, the
                      method is capable of determining both quantities precisely
                      also in multilayer structures, as is demonstrated for films
                      underneath metal contacts. Several applications are
                      discussed. Employing literature data of laser-induced
                      temperature rise, laser scanning is used to measure the H
                      diffusion coefficient at T > 500 °C in a-Si:H. The
                      model-based high temperature hydrogen diffusion parameters
                      are confirmed with important implications for the
                      understanding of hydrogen diffusion in the amorphous silicon
                      material},
      cin          = {IEK-5 / ZEA-3},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013 / I:(DE-Juel1)ZEA-3-20090406},
      pnm          = {121 - Solar cells of the next generation (POF3-121)},
      pid          = {G:(DE-HGF)POF3-121},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000448317300049},
      doi          = {10.1063/1.5038090},
      url          = {https://juser.fz-juelich.de/record/859760},
}