% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Hiller:859772,
      author       = {Hiller, Daniel and Jordan, Paul M. and Ding, Kaining and
                      Pomaska, Manuel and Mikolajick, Thomas and König, Dirk},
      title        = {{D}eactivation of silicon surface states by {A}l-induced
                      acceptor states from {A}l–{O} monolayers in {S}i{O} 2},
      journal      = {Journal of applied physics},
      volume       = {125},
      number       = {1},
      issn         = {1089-7550},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2019-00603},
      pages        = {015301 -},
      year         = {2019},
      abstract     = {Al–O monolayers embedded in ultrathin SiO2 were shown
                      previously to contain Al-induced acceptor states, which
                      capture electrons from adjacent silicon wafers and generate
                      a negative fixed charge that enables efficient Si-surface
                      passivation. Here, we show that this surface passivation is
                      just in part attributed to field-effect passivation, since
                      the electrically active interface trap density Dit itself at
                      the Si/SiO2 interface is reduced by the presence of the
                      acceptor states. For sufficiently thin tunnel-SiO2 films
                      between the Si-surface and the Al–O monolayers, Dit is
                      reduced by more than one order of magnitude. This is
                      attributed to an interface defect deactivation mechanism
                      that involves the discharge of the singly-occupied dangling
                      bonds (Pb0 defects) into the acceptor states, so that
                      Shockley-Read-Hall-recombination is drastically reduced. We
                      demonstrate that the combined electronic and field-effect
                      passivation allows for minority carrier lifetimes in excess
                      of 1 ms on n-type Si and that additional H2-passivation is
                      not able to improve that lifetime significantly.I.
                      INTRODUCTION},
      cin          = {IEK-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {899 - ohne Topic (POF3-899)},
      pid          = {G:(DE-HGF)POF3-899},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000455350200020},
      doi          = {10.1063/1.5054703},
      url          = {https://juser.fz-juelich.de/record/859772},
}