000859840 001__ 859840
000859840 005__ 20210130000406.0
000859840 0247_ $$2doi$$a10.1038/s41598-018-36837-8
000859840 0247_ $$2Handle$$a2128/21408
000859840 0247_ $$2pmid$$apmid:30670785
000859840 0247_ $$2WOS$$aWOS:000456282100014
000859840 037__ $$aFZJ-2019-00662
000859840 082__ $$a600
000859840 1001_ $$0P:(DE-Juel1)166341$$aRainko, Denis$$b0$$eCorresponding author$$ufzj
000859840 245__ $$aImpact of tensile strain on low Sn content GeSn lasing
000859840 260__ $$a[London]$$bMacmillan Publishers Limited, part of Springer Nature$$c2019
000859840 3367_ $$2DRIVER$$aarticle
000859840 3367_ $$2DataCite$$aOutput Types/Journal article
000859840 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1548685377_8554
000859840 3367_ $$2BibTeX$$aARTICLE
000859840 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000859840 3367_ $$00$$2EndNote$$aJournal Article
000859840 520__ $$aIn recent years much effort has been made to increase the Sn content in GeSn alloys in order to increasedirect bandgap charge carrier recombination and, therefore, to reach room temperature lasing.While being successful for the former, the increase of Sn content is detrimental, leading to increaseddefect concentrations and a lower thermal budget regarding processing. In this work we demonstratestrong photoluminescence enhancement in low Sn content Ge0.94Sn0.06 layers by implementing tensilestrain. Fitting of the calculated photoluminescence spectra to reproduce our experimental resultsindicates a strain of ~1.45%, induced via an SiNx stressor layer, which is strong enough to transform theinvestigated layer into a direct bandgap semiconductor. Moreover, theoretical calculations, using the8-band k·p model, show the advantages of using low Sn content tensile strained GeSn layers in respectto gain and lasing temperature. We show that low Sn content GeSn alloys have a strong potential toenable efficient room temperature lasers on electronic-photonic integrated circuits.
000859840 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000859840 588__ $$aDataset connected to CrossRef
000859840 7001_ $$0P:(DE-HGF)0$$aIkonic, Zoran$$b1
000859840 7001_ $$0P:(DE-HGF)0$$aElbaz, Anas$$b2
000859840 7001_ $$0P:(DE-Juel1)161247$$avon den Driesch, Nils$$b3$$ufzj
000859840 7001_ $$0P:(DE-Juel1)161180$$aStange, Daniela$$b4$$ufzj
000859840 7001_ $$0P:(DE-HGF)0$$aHerth, Etienne$$b5
000859840 7001_ $$0P:(DE-HGF)0$$aBoucaud, Philippe$$b6
000859840 7001_ $$0P:(DE-HGF)0$$aEl Kurdi, Moustafa$$b7
000859840 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b8$$ufzj
000859840 7001_ $$0P:(DE-Juel1)125569$$aBuca, Dan Mihai$$b9$$ufzj
000859840 773__ $$0PERI:(DE-600)2615211-3$$a10.1038/s41598-018-36837-8$$gVol. 9, no. 1, p. 259$$n1$$p259$$tScientific reports$$v9$$x2045-2322$$y2019
000859840 8564_ $$uhttps://juser.fz-juelich.de/record/859840/files/30035393640008550743INVOIC2676127001001.pdf
000859840 8564_ $$uhttps://juser.fz-juelich.de/record/859840/files/2019_Rainko_Impact%20of%20tensile%20strain%20on%20low%20Sn%20content%20GeSn%20lasing.pdf$$yOpenAccess
000859840 8564_ $$uhttps://juser.fz-juelich.de/record/859840/files/30035393640008550743INVOIC2676127001001.pdf?subformat=pdfa$$xpdfa
000859840 8564_ $$uhttps://juser.fz-juelich.de/record/859840/files/2019_Rainko_Impact%20of%20tensile%20strain%20on%20low%20Sn%20content%20GeSn%20lasing.pdf?subformat=pdfa$$xpdfa$$yOpenAccess
000859840 909CO $$ooai:juser.fz-juelich.de:859840$$pdnbdelivery$$pdriver$$pVDB$$popen_access$$popenaire
000859840 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)166341$$aForschungszentrum Jülich$$b0$$kFZJ
000859840 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)161247$$aForschungszentrum Jülich$$b3$$kFZJ
000859840 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)161180$$aForschungszentrum Jülich$$b4$$kFZJ
000859840 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125588$$aForschungszentrum Jülich$$b8$$kFZJ
000859840 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125569$$aForschungszentrum Jülich$$b9$$kFZJ
000859840 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000859840 9141_ $$y2019
000859840 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000859840 915__ $$0StatID:(DE-HGF)1050$$2StatID$$aDBCoverage$$bBIOSIS Previews
000859840 915__ $$0LIC:(DE-HGF)CCBY4$$2HGFVOC$$aCreative Commons Attribution CC BY 4.0
000859840 915__ $$0StatID:(DE-HGF)0600$$2StatID$$aDBCoverage$$bEbsco Academic Search
000859840 915__ $$0StatID:(DE-HGF)1040$$2StatID$$aDBCoverage$$bZoological Record
000859840 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bSCI REP-UK : 2017
000859840 915__ $$0StatID:(DE-HGF)0501$$2StatID$$aDBCoverage$$bDOAJ Seal
000859840 915__ $$0StatID:(DE-HGF)0500$$2StatID$$aDBCoverage$$bDOAJ
000859840 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000859840 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000859840 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000859840 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000859840 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000859840 915__ $$0StatID:(DE-HGF)0030$$2StatID$$aPeer Review$$bASC
000859840 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000859840 915__ $$0StatID:(DE-HGF)0310$$2StatID$$aDBCoverage$$bNCBI Molecular Biology Database
000859840 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000859840 915__ $$0StatID:(DE-HGF)0320$$2StatID$$aDBCoverage$$bPubMed Central
000859840 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bClarivate Analytics Master Journal List
000859840 920__ $$lno
000859840 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000859840 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1
000859840 9201_ $$0I:(DE-Juel1)PGI-10-20170113$$kPGI-10$$lJARA Institut Green IT$$x2
000859840 980__ $$ajournal
000859840 980__ $$aVDB
000859840 980__ $$aUNRESTRICTED
000859840 980__ $$aI:(DE-Juel1)PGI-9-20110106
000859840 980__ $$aI:(DE-82)080009_20140620
000859840 980__ $$aI:(DE-Juel1)PGI-10-20170113
000859840 9801_ $$aFullTexts