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@ARTICLE{Rainko:859840,
      author       = {Rainko, Denis and Ikonic, Zoran and Elbaz, Anas and von den
                      Driesch, Nils and Stange, Daniela and Herth, Etienne and
                      Boucaud, Philippe and El Kurdi, Moustafa and Grützmacher,
                      Detlev and Buca, Dan Mihai},
      title        = {{I}mpact of tensile strain on low {S}n content {G}e{S}n
                      lasing},
      journal      = {Scientific reports},
      volume       = {9},
      number       = {1},
      issn         = {2045-2322},
      address      = {[London]},
      publisher    = {Macmillan Publishers Limited, part of Springer Nature},
      reportid     = {FZJ-2019-00662},
      pages        = {259},
      year         = {2019},
      abstract     = {In recent years much effort has been made to increase the
                      Sn content in GeSn alloys in order to increasedirect bandgap
                      charge carrier recombination and, therefore, to reach room
                      temperature lasing.While being successful for the former,
                      the increase of Sn content is detrimental, leading to
                      increaseddefect concentrations and a lower thermal budget
                      regarding processing. In this work we demonstratestrong
                      photoluminescence enhancement in low Sn content Ge0.94Sn0.06
                      layers by implementing tensilestrain. Fitting of the
                      calculated photoluminescence spectra to reproduce our
                      experimental resultsindicates a strain of $~1.45\%,$ induced
                      via an SiNx stressor layer, which is strong enough to
                      transform theinvestigated layer into a direct bandgap
                      semiconductor. Moreover, theoretical calculations, using
                      the8-band k·p model, show the advantages of using low Sn
                      content tensile strained GeSn layers in respectto gain and
                      lasing temperature. We show that low Sn content GeSn alloys
                      have a strong potential toenable efficient room temperature
                      lasers on electronic-photonic integrated circuits.},
      cin          = {PGI-9 / JARA-FIT / PGI-10},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-10-20170113},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:30670785},
      UT           = {WOS:000456282100014},
      doi          = {10.1038/s41598-018-36837-8},
      url          = {https://juser.fz-juelich.de/record/859840},
}