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@ARTICLE{Fukuda:859842,
      author       = {Fukuda, Masahiro and Rainko, Denis and Sakashita, Mitsuo
                      and Kurosawa, Masashi and Buca, Dan Mihai and Nakatsuka,
                      Osamu and Zaima, Shigeaki},
      title        = {{O}ptoelectronic properties of high-{S}i-content-{G}e 1
                      −x – y {S}i x {S}n y /{G}e 1− x {S}n x /{G}e 1−
                      x–y {S}i x {S}n y double heterostructure},
      journal      = {Semiconductor science and technology},
      volume       = {33},
      number       = {12},
      issn         = {1361-6641},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2019-00664},
      pages        = {124018 -},
      year         = {2018},
      abstract     = {The optoelectronic properties of
                      Ge1−x−ySixSny/Ge1−xSnx/Ge1−x−ySixSny
                      doubleheterostructures pseudomorphically grown on a Ge
                      substrate were investigated. Thephotoluminescence (PL)
                      intensity of the sample with Ge0.66Si0.23Sn0.11 cladding
                      layers is threetimes larger compared to PL from structure
                      with a Ge cladding layer, which can be attributed tohigher
                      energy band offsets at both conduction and valence band
                      edges at theGe0.91Sn0.09/Ge0.66Si0.23Sn0.11 interface. The
                      PL spectrum of the sample with theGe0.66Si0.23Sn0.11
                      cladding layer at room temperature can be deconvoluted into
                      four components,and the origins of these components can be
                      assigned to direct and indirect transitions bymeasuring the
                      temperature dependence of each component’s intensity. In
                      addition, we examinedthe formation and characterization of
                      strain-relaxed
                      Ge1−x−ySixSny/Ge1−xSnx/Ge1−x−ySixSnydouble
                      heterostructures to relieve the compressive strain in the
                      Ge1−xSnx layer. Stacking faultswere observed in the
                      Ge1−xSnx and Ge1−x−ySixSny layers. The PL peak
                      intensity of the strainrelaxedGe1−xSnx layer decreases by
                      a factor of 1/20 compared to the PL peak intensity of
                      thedouble heterostructure pseudomorphically grown on a
                      Ge(001) substrate. In addition, PLintensity can be increased
                      by post-deposition annealing owing to decreasing defects.},
      cin          = {PGI-9 / JARA-FIT / PGI-10},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-10-20170113},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000450304300001},
      doi          = {10.1088/1361-6641/aaebb5},
      url          = {https://juser.fz-juelich.de/record/859842},
}