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| Home > Publications database > Optoelectronic properties of high-Si-content-Ge 1 −x – y Si x Sn y /Ge 1− x Sn x /Ge 1− x–y Si x Sn y double heterostructure > print |
| 001 | 859842 | ||
| 005 | 20210130000406.0 | ||
| 024 | 7 | _ | |a 10.1088/1361-6641/aaebb5 |2 doi |
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| 024 | 7 | _ | |a 1361-6641 |2 ISSN |
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| 037 | _ | _ | |a FZJ-2019-00664 |
| 082 | _ | _ | |a 620 |
| 100 | 1 | _ | |a Fukuda, Masahiro |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Optoelectronic properties of high-Si-content-Ge 1 −x – y Si x Sn y /Ge 1− x Sn x /Ge 1− x–y Si x Sn y double heterostructure |
| 260 | _ | _ | |a Bristol |c 2018 |b IOP Publ. |
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| 520 | _ | _ | |a The optoelectronic properties of Ge1−x−ySixSny/Ge1−xSnx/Ge1−x−ySixSny doubleheterostructures pseudomorphically grown on a Ge substrate were investigated. Thephotoluminescence (PL) intensity of the sample with Ge0.66Si0.23Sn0.11 cladding layers is threetimes larger compared to PL from structure with a Ge cladding layer, which can be attributed tohigher energy band offsets at both conduction and valence band edges at theGe0.91Sn0.09/Ge0.66Si0.23Sn0.11 interface. The PL spectrum of the sample with theGe0.66Si0.23Sn0.11 cladding layer at room temperature can be deconvoluted into four components,and the origins of these components can be assigned to direct and indirect transitions bymeasuring the temperature dependence of each component’s intensity. In addition, we examinedthe formation and characterization of strain-relaxed Ge1−x−ySixSny/Ge1−xSnx/Ge1−x−ySixSnydouble heterostructures to relieve the compressive strain in the Ge1−xSnx layer. Stacking faultswere observed in the Ge1−xSnx and Ge1−x−ySixSny layers. The PL peak intensity of the strainrelaxedGe1−xSnx layer decreases by a factor of 1/20 compared to the PL peak intensity of thedouble heterostructure pseudomorphically grown on a Ge(001) substrate. In addition, PLintensity can be increased by post-deposition annealing owing to decreasing defects. |
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| 700 | 1 | _ | |a Rainko, Denis |0 P:(DE-Juel1)166341 |b 1 |
| 700 | 1 | _ | |a Sakashita, Mitsuo |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Kurosawa, Masashi |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Buca, Dan Mihai |0 P:(DE-Juel1)125569 |b 4 |
| 700 | 1 | _ | |a Nakatsuka, Osamu |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a Zaima, Shigeaki |0 P:(DE-HGF)0 |b 6 |
| 773 | _ | _ | |a 10.1088/1361-6641/aaebb5 |g Vol. 33, no. 12, p. 124018 - |0 PERI:(DE-600)1361285-2 |n 12 |p 124018 - |t Semiconductor science and technology |v 33 |y 2018 |x 1361-6641 |
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