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Anionic and cationic stoichiometry variations in the conductive filament of valence change memristive devices
Bäumer, C.FZJ* ; Heisig, T.FZJ* ; Funck, C.FZJ* ; Cooper, D. ; Hensling, F.FZJ* ; Schmitz, C. ; Marchewka, A. ; Menzel, S.FZJ* ; Schneider, C. M.FZJ* ; Waser, R.FZJ* ; Dittmann, R.FZJ*
2018
2018Faraday Dicussions “New memory paradigms: memristive phenomena and neuromorphic applications, AachenAachen, Germany, 15 Oct 2018 - 17 Oct 20182018-10-152018-10-17
Contributing Institute(s):
- Elektronische Materialien (PGI-7)
- JARA-FIT (JARA-FIT)
- Elektronische Eigenschaften (PGI-6)
Research Program(s):
- 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)
Appears in the scientific report
2018