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@ARTICLE{Linnenberg:860037,
      author       = {Linnenberg, Oliver and Moors, Marco and Notario-Estévez,
                      Almudena and López, Xavier and de Graaf, Coen and Peter,
                      Sophia and Baeumer, Christoph and Waser, R. and Monakhov,
                      Kirill Yu.},
      title        = {{A}ddressing {M}ultiple {R}esistive {S}tates of
                      {P}olyoxovanadates: {C}onductivity as a {F}unction of
                      {I}ndividual {M}olecular {R}edox {S}tates},
      journal      = {Journal of the American Chemical Society},
      volume       = {140},
      number       = {48},
      issn         = {1520-5126},
      address      = {Washington, DC},
      publisher    = {American Chemical Society},
      reportid     = {FZJ-2019-00834},
      pages        = {16635 - 16640},
      year         = {2018},
      abstract     = {The sustainable development of IT-systems requires a quest
                      for novel concepts to address further miniaturization,
                      performance improvement, and energy efficiency of devices.
                      The realization of these goals cannot be achieved without an
                      appropriate functional material. Herein, we target the
                      technologically important electron modification using single
                      polyoxometalate (POM) molecules envisaged as smart
                      successors of materials that are implemented in today’s
                      complementary metal-oxide-semiconductor (CMOS) technology.
                      Lindqvist-type POMs were physisorbed on the Au(111) surface,
                      preserving their structural and electronic characteristics.
                      By applying an external voltage at room temperature, the
                      valence state of the single POM molecule could be changed
                      multiple times through the injection of up to 4 electrons.
                      The molecular electrical conductivity is dependent on the
                      number of vanadium 3d electrons, resulting in several
                      discrete conduction states with increasing conductivity.
                      This fundamentally important finding illustrates the
                      far-reaching opportunities for POM molecules in the area of
                      multiple-state resistive (memristive) switching.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:30418764},
      UT           = {WOS:000452693800036},
      doi          = {10.1021/jacs.8b08780},
      url          = {https://juser.fz-juelich.de/record/860037},
}