TY  - THES
AU  - Aslam, Nabeel
TI  - Resistive switching memory devices from atomic layer deposited binary and ternary oxide thin films
PB  - RWTH Aachen
VL  - Dissertation
M1  - FZJ-2019-00840
SN  - 978-3-95806-274-0
SP  - 100
PY  - 2017
N1  - Dissertation, RWTH Aachen, 2017
LB  - PUB:(DE-HGF)3 ; PUB:(DE-HGF)11
UR  - https://juser.fz-juelich.de/record/860043
ER  -