Home > Publications database > Resistive switching memory devices from atomic layer deposited binary and ternary oxide thin films > print |
001 | 860043 | ||
005 | 20210130000436.0 | ||
020 | _ | _ | |a 978-3-95806-274-0 |
037 | _ | _ | |a FZJ-2019-00840 |
100 | 1 | _ | |a Aslam, Nabeel |0 P:(DE-Juel1)140489 |b 0 |e Corresponding author |
245 | _ | _ | |a Resistive switching memory devices from atomic layer deposited binary and ternary oxide thin films |f - 2017-11-29 |
260 | _ | _ | |c 2017 |
300 | _ | _ | |a 100 |
336 | 7 | _ | |a Output Types/Dissertation |2 DataCite |
336 | 7 | _ | |a Book |0 PUB:(DE-HGF)3 |2 PUB:(DE-HGF) |m book |
336 | 7 | _ | |a DISSERTATION |2 ORCID |
336 | 7 | _ | |a PHDTHESIS |2 BibTeX |
336 | 7 | _ | |a Thesis |0 2 |2 EndNote |
336 | 7 | _ | |a Dissertation / PhD Thesis |b phd |m phd |0 PUB:(DE-HGF)11 |s 1548684522_8554 |2 PUB:(DE-HGF) |
336 | 7 | _ | |a doctoralThesis |2 DRIVER |
502 | _ | _ | |a Dissertation, RWTH Aachen, 2017 |c RWTH Aachen |b Dissertation |d 2017 |
536 | _ | _ | |a 524 - Controlling Collective States (POF3-524) |0 G:(DE-HGF)POF3-524 |c POF3-524 |f POF III |x 0 |
909 | C | O | |o oai:juser.fz-juelich.de:860043 |p VDB |
910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)140489 |
913 | 1 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-524 |2 G:(DE-HGF)POF3-500 |v Controlling Collective States |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
914 | 1 | _ | |y 2018 |
920 | _ | _ | |l yes |
920 | 1 | _ | |0 I:(DE-Juel1)PGI-7-20110106 |k PGI-7 |l Elektronische Materialien |x 0 |
920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l JARA-FIT |x 1 |
980 | _ | _ | |a phd |
980 | _ | _ | |a VDB |
980 | _ | _ | |a book |
980 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
980 | _ | _ | |a I:(DE-82)080009_20140620 |
980 | _ | _ | |a UNRESTRICTED |
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