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@ARTICLE{Nishi:860104,
author = {Nishi, Yoshifumi and Bottger, Ulrich and Waser, R. and
Menzel, Stephan},
title = {{C}rossover {F}rom {D}eterministic to {S}tochastic {N}ature
of {R}esistive-{S}witching {S}tatistics in a {T}antalum
{O}xide {T}hin {F}ilm},
journal = {IEEE transactions on electron devices},
volume = {65},
number = {10},
issn = {1557-9646},
address = {New York, NY},
publisher = {IEEE},
reportid = {FZJ-2019-00890},
pages = {4320 - 4325},
year = {2018},
abstract = {We study the voltage dependence of the SET time statistics
of bipolar resistive switching in a tantalum oxide thin
film. Weibull analysis reveals that the SET time statistics
exhibit a crossover from deterministic to stochastic nature
in a single cell as the amplitude of the applied voltage is
lowered. While the Joule heating effect has a general
contribution to the SET physics in both deterministic and
stochastic cases, the magnitude of the positive feedback
cycle of the Joule heating determines the statistical
nature. Sufficient feedback effect under a voltage of large
amplitude increases the SET probability with time, resulting
in the SET time distribution with a deterministic nature.
When amplitude of the applied voltage is small, on the other
hand, the feedback effect is weak hence the SET process is
controlled by randomness of the cell condition. In this
case, the SET time is totally unpredictable hence its
statistics has a stochastic nature. Since the crossover
between the deterministic and stochastic regimes is found to
occur based on the electric field rather than the current,
we argue that it stems from a field-driven redox reaction at
the tantalum oxide/tantalum interface.},
cin = {PGI-7 / JARA-FIT},
ddc = {620},
cid = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000445239700038},
doi = {10.1109/TED.2018.2866127},
url = {https://juser.fz-juelich.de/record/860104},
}