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@ARTICLE{Nishi:860104,
      author       = {Nishi, Yoshifumi and Bottger, Ulrich and Waser, R. and
                      Menzel, Stephan},
      title        = {{C}rossover {F}rom {D}eterministic to {S}tochastic {N}ature
                      of {R}esistive-{S}witching {S}tatistics in a {T}antalum
                      {O}xide {T}hin {F}ilm},
      journal      = {IEEE transactions on electron devices},
      volume       = {65},
      number       = {10},
      issn         = {1557-9646},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2019-00890},
      pages        = {4320 - 4325},
      year         = {2018},
      abstract     = {We study the voltage dependence of the SET time statistics
                      of bipolar resistive switching in a tantalum oxide thin
                      film. Weibull analysis reveals that the SET time statistics
                      exhibit a crossover from deterministic to stochastic nature
                      in a single cell as the amplitude of the applied voltage is
                      lowered. While the Joule heating effect has a general
                      contribution to the SET physics in both deterministic and
                      stochastic cases, the magnitude of the positive feedback
                      cycle of the Joule heating determines the statistical
                      nature. Sufficient feedback effect under a voltage of large
                      amplitude increases the SET probability with time, resulting
                      in the SET time distribution with a deterministic nature.
                      When amplitude of the applied voltage is small, on the other
                      hand, the feedback effect is weak hence the SET process is
                      controlled by randomness of the cell condition. In this
                      case, the SET time is totally unpredictable hence its
                      statistics has a stochastic nature. Since the crossover
                      between the deterministic and stochastic regimes is found to
                      occur based on the electric field rather than the current,
                      we argue that it stems from a field-driven redox reaction at
                      the tantalum oxide/tantalum interface.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000445239700038},
      doi          = {10.1109/TED.2018.2866127},
      url          = {https://juser.fz-juelich.de/record/860104},
}