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@ARTICLE{Ascoli:860115,
      author       = {Ascoli, A. and Tetzlaff, R. and Menzel, S.},
      title        = {{E}xploring the {D}ynamics of {R}eal-{W}orld {M}emristors
                      on the {B}asis of {C}ircuit {T}heoretic {M}odel
                      {P}redictions},
      journal      = {IEEE circuits and systems magazine},
      volume       = {18},
      number       = {2},
      issn         = {1558-0830},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2019-00901},
      pages        = {48 - 76},
      year         = {2018},
      abstract     = {The memristor represents the key circuit element for the
                      development of the constitutive blocks of future
                      non-volatile memory architectures and neuromorphic systems.
                      However, resistance switching memories offer a plethora of
                      further opportunities for the electronics of the future. By
                      virtue of the compatibility between the well-established
                      CMOS technology and the fabrication process of most
                      memristors, the exploitation of the peculiar dynamic
                      behaviour of resistance switching memories, which, in
                      general, differ depending upon their material composition,
                      may allow the development of new circuits, which, processing
                      information in unconventional forms, may extend and/or
                      complement the functionalities of state-of-the-art
                      electronic systems. Further, the attractive capability of
                      real-world non-volatile memristors to store and process
                      information in the same physical nanoscale location open the
                      fascinating opportunity to improve the low throughput of Von
                      Neumann computing machines, due to the limited bandwidth of
                      the bus transferring data between the memory and the central
                      processing unit. Finally, the extreme sensitivity of their
                      electrical behaviour to small changes in their initial
                      condition/input and the intrinsic stochastic variability in
                      their switching dynamics may be harnessed to develop
                      innovative bio-signal sensors as well as new cryptographic
                      circuits and systems. The derivation of accurate
                      mathematical models for the electrical behaviour of
                      real-world memristor nano-devices, and their later circuit-
                      and system-theoretic investigation aimed at drawing a
                      comprehensive picture of their peculiar nonlinear dynamic
                      behaviour under the set of inputs and initial conditions
                      expected of the application of interest are fundamental
                      steps towards their conscious future use in integrated
                      circuit design. With this in mind, the present paper adopts
                      a powerful theoretic tool known as Dynamic Route Map to
                      analyse some of the most reliable physics-based models of
                      real-world resi...},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000433912200007},
      doi          = {10.1109/MCAS.2018.2821760},
      url          = {https://juser.fz-juelich.de/record/860115},
}