% IMPORTANT: The following is UTF-8 encoded. This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.
@ARTICLE{Ascoli:860115,
author = {Ascoli, A. and Tetzlaff, R. and Menzel, S.},
title = {{E}xploring the {D}ynamics of {R}eal-{W}orld {M}emristors
on the {B}asis of {C}ircuit {T}heoretic {M}odel
{P}redictions},
journal = {IEEE circuits and systems magazine},
volume = {18},
number = {2},
issn = {1558-0830},
address = {New York, NY},
publisher = {IEEE},
reportid = {FZJ-2019-00901},
pages = {48 - 76},
year = {2018},
abstract = {The memristor represents the key circuit element for the
development of the constitutive blocks of future
non-volatile memory architectures and neuromorphic systems.
However, resistance switching memories offer a plethora of
further opportunities for the electronics of the future. By
virtue of the compatibility between the well-established
CMOS technology and the fabrication process of most
memristors, the exploitation of the peculiar dynamic
behaviour of resistance switching memories, which, in
general, differ depending upon their material composition,
may allow the development of new circuits, which, processing
information in unconventional forms, may extend and/or
complement the functionalities of state-of-the-art
electronic systems. Further, the attractive capability of
real-world non-volatile memristors to store and process
information in the same physical nanoscale location open the
fascinating opportunity to improve the low throughput of Von
Neumann computing machines, due to the limited bandwidth of
the bus transferring data between the memory and the central
processing unit. Finally, the extreme sensitivity of their
electrical behaviour to small changes in their initial
condition/input and the intrinsic stochastic variability in
their switching dynamics may be harnessed to develop
innovative bio-signal sensors as well as new cryptographic
circuits and systems. The derivation of accurate
mathematical models for the electrical behaviour of
real-world memristor nano-devices, and their later circuit-
and system-theoretic investigation aimed at drawing a
comprehensive picture of their peculiar nonlinear dynamic
behaviour under the set of inputs and initial conditions
expected of the application of interest are fundamental
steps towards their conscious future use in integrated
circuit design. With this in mind, the present paper adopts
a powerful theoretic tool known as Dynamic Route Map to
analyse some of the most reliable physics-based models of
real-world resi...},
cin = {PGI-7 / JARA-FIT},
ddc = {620},
cid = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000433912200007},
doi = {10.1109/MCAS.2018.2821760},
url = {https://juser.fz-juelich.de/record/860115},
}