001     860115
005     20210130000441.0
024 7 _ |a 10.1109/MCAS.2018.2821760
|2 doi
024 7 _ |a 0163-6812
|2 ISSN
024 7 _ |a 1531-636X
|2 ISSN
024 7 _ |a 1558-0830
|2 ISSN
024 7 _ |a WOS:000433912200007
|2 WOS
037 _ _ |a FZJ-2019-00901
082 _ _ |a 620
100 1 _ |a Ascoli, A.
|0 P:(DE-HGF)0
|b 0
245 _ _ |a Exploring the Dynamics of Real-World Memristors on the Basis of Circuit Theoretic Model Predictions
260 _ _ |a New York, NY
|c 2018
|b IEEE
336 7 _ |a article
|2 DRIVER
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|b journal
|m journal
|0 PUB:(DE-HGF)16
|s 1548832918_8840
|2 PUB:(DE-HGF)
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a Journal Article
|0 0
|2 EndNote
520 _ _ |a The memristor represents the key circuit element for the development of the constitutive blocks of future non-volatile memory architectures and neuromorphic systems. However, resistance switching memories offer a plethora of further opportunities for the electronics of the future. By virtue of the compatibility between the well-established CMOS technology and the fabrication process of most memristors, the exploitation of the peculiar dynamic behaviour of resistance switching memories, which, in general, differ depending upon their material composition, may allow the development of new circuits, which, processing information in unconventional forms, may extend and/or complement the functionalities of state-of-the-art electronic systems. Further, the attractive capability of real-world non-volatile memristors to store and process information in the same physical nanoscale location open the fascinating opportunity to improve the low throughput of Von Neumann computing machines, due to the limited bandwidth of the bus transferring data between the memory and the central processing unit. Finally, the extreme sensitivity of their electrical behaviour to small changes in their initial condition/input and the intrinsic stochastic variability in their switching dynamics may be harnessed to develop innovative bio-signal sensors as well as new cryptographic circuits and systems. The derivation of accurate mathematical models for the electrical behaviour of real-world memristor nano-devices, and their later circuit- and system-theoretic investigation aimed at drawing a comprehensive picture of their peculiar nonlinear dynamic behaviour under the set of inputs and initial conditions expected of the application of interest are fundamental steps towards their conscious future use in integrated circuit design. With this in mind, the present paper adopts a powerful theoretic tool known as Dynamic Route Map to analyse some of the most reliable physics-based models of real-world resi...
536 _ _ |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521)
|0 G:(DE-HGF)POF3-521
|c POF3-521
|f POF III
|x 0
588 _ _ |a Dataset connected to CrossRef
700 1 _ |a Tetzlaff, R.
|0 P:(DE-HGF)0
|b 1
700 1 _ |a Menzel, S.
|0 P:(DE-Juel1)158062
|b 2
|u fzj
773 _ _ |a 10.1109/MCAS.2018.2821760
|g Vol. 18, no. 2, p. 48 - 76
|0 PERI:(DE-600)2062396-3
|n 2
|p 48 - 76
|t IEEE circuits and systems magazine
|v 18
|y 2018
|x 1558-0830
856 4 _ |u https://juser.fz-juelich.de/record/860115/files/08369449.pdf
|y Restricted
856 4 _ |u https://juser.fz-juelich.de/record/860115/files/08369449.pdf?subformat=pdfa
|x pdfa
|y Restricted
909 C O |o oai:juser.fz-juelich.de:860115
|p VDB
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 2
|6 P:(DE-Juel1)158062
913 1 _ |a DE-HGF
|b Key Technologies
|l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
|1 G:(DE-HGF)POF3-520
|0 G:(DE-HGF)POF3-521
|2 G:(DE-HGF)POF3-500
|v Controlling Electron Charge-Based Phenomena
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF3
914 1 _ |y 2018
915 _ _ |a JCR
|0 StatID:(DE-HGF)0100
|2 StatID
|b IEEE CIRC SYST MAG : 2017
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0200
|2 StatID
|b SCOPUS
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0199
|2 StatID
|b Clarivate Analytics Master Journal List
915 _ _ |a WoS
|0 StatID:(DE-HGF)0111
|2 StatID
|b Science Citation Index Expanded
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0150
|2 StatID
|b Web of Science Core Collection
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)1160
|2 StatID
|b Current Contents - Engineering, Computing and Technology
915 _ _ |a IF < 5
|0 StatID:(DE-HGF)9900
|2 StatID
920 1 _ |0 I:(DE-Juel1)PGI-7-20110106
|k PGI-7
|l Elektronische Materialien
|x 0
920 1 _ |0 I:(DE-82)080009_20140620
|k JARA-FIT
|l JARA-FIT
|x 1
980 _ _ |a journal
980 _ _ |a VDB
980 _ _ |a I:(DE-Juel1)PGI-7-20110106
980 _ _ |a I:(DE-82)080009_20140620
980 _ _ |a UNRESTRICTED


LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21