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@ARTICLE{Mehonic:860222,
      author       = {Mehonic, Adnan and Shluger, Alexander L. and Gao, David and
                      Valov, Ilia and Miranda, Enrique and Ielmini, Daniele and
                      Bricalli, Alessandro and Ambrosi, Elia and Li, Can and Yang,
                      J. Joshua and Xia, Qiangfei and Kenyon, Anthony J.},
      title        = {{S}ilicon {O}xide ({S}i{O} x ): {A} {P}romising {M}aterial
                      for {R}esistance {S}witching?},
      journal      = {Advanced materials},
      volume       = {30},
      number       = {43},
      issn         = {0935-9648},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2019-01006},
      pages        = {1801187 -},
      year         = {2018},
      abstract     = {Interest in resistance switching is currently growing
                      apace. The promise of novel high‐density, low‐power,
                      high‐speed nonvolatile memory devices is appealing enough,
                      but beyond that there are exciting future possibilities for
                      applications in hardware acceleration for machine learning
                      and artificial intelligence, and for neuromorphic computing.
                      A very wide range of material systems exhibit resistance
                      switching, a number of which—primarily transition metal
                      oxides—are currently being investigated as complementary
                      metal–oxide–semiconductor (CMOS)‐compatible
                      technologies. Here, the case is made for silicon oxide,
                      perhaps the most CMOS‐compatible dielectric, yet one that
                      has had comparatively little attention as a
                      resistance‐switching material. Herein, a taxonomy of
                      switching mechanisms in silicon oxide is presented, and the
                      current state of the art in modeling, understanding
                      fundamental switching mechanisms, and exciting device
                      applications is summarized. In conclusion, silicon oxide is
                      an excellent choice for resistance‐switching technologies,
                      offering a number of compelling advantages over competing
                      material systems.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {660},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:29957849},
      UT           = {WOS:000448786000004},
      doi          = {10.1002/adma.201801187},
      url          = {https://juser.fz-juelich.de/record/860222},
}