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@ARTICLE{Zaffora:860227,
      author       = {Zaffora, Andrea and Macaluso, Roberto and Habazaki, Hiroki
                      and Valov, Ilia and Santamaria, Monica},
      title        = {{E}lectrochemically prepared oxides for resistive switching
                      devices},
      journal      = {Electrochimica acta},
      volume       = {274},
      issn         = {0013-4686},
      address      = {New York, NY [u.a.]},
      publisher    = {Elsevier},
      reportid     = {FZJ-2019-01011},
      pages        = {103 - 111},
      year         = {2018},
      abstract     = {Redox-based resistive switching memories (ReRAM) based on
                      metal oxides are considered as the next generation
                      non-volatile memories and building units for neuromorphic
                      computing. Using different deposition techniques results
                      however in different structural and electric properties,
                      modulating the device performance. In this study HfO2 and
                      Nb2O5 were prepared electrochemically by anodizing
                      sputtering-deposited Hf and Nb in borate buffer solution.
                      Photoelectrochemical measurements were used to study the
                      solid state properties of the anodic oxides, such as band
                      gap and flat band potential. In the case of anodic HfO2,
                      detected photocurrent is ascribed to optical transitions
                      between localized (generated by the presence of oxygen
                      vacancies into the oxide) and extended states. Impedance
                      measurements disclosed the formation of n-type Nb2O5 and
                      insulating HfO2. Pt top electrode was deposited onto the
                      metal/anodic oxide junctions to fabricate ReRAM cells.
                      Whereas switching behaviour of Nb/anodic Nb2O5/Pt cells was
                      not reliable, good endurance and retention performances were
                      proved in the case of Hf/anodic HfO2/Pt cells, showing that
                      electrochemical growth of the oxides can be a reliable way
                      to fabricate solid electrolytes for resistive switching
                      memories.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000432158000013},
      doi          = {10.1016/j.electacta.2018.04.087},
      url          = {https://juser.fz-juelich.de/record/860227},
}