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@INPROCEEDINGS{Valov:860235,
      author       = {Valov, Ilia},
      title        = {{M}echanisms {D}esign strategies for memristors:
                      materials’ properties – nanoscale processes – device
                      performance},
      reportid     = {FZJ-2019-01019},
      year         = {2018},
      month         = {Aug},
      date          = {2018-08-31},
      organization  = {International Emergent Memory
                       Symposium, Ji'an (China), 31 Aug 2018 -
                       2 Sep 2018},
      subtyp        = {Plenary/Keynote},
      cin          = {PGI-7 / JARA-FIT},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/860235},
}