Home > Publications database > Mechanisms Design strategies for memristors: materials’ properties – nanoscale processes – device performance > print

001     860235
005     20210130000455.0
037 _ _ |a FZJ-2019-01019
100 1 _ |a Valov, Ilia
|0 P:(DE-Juel1)131014
|b 0
|e Corresponding author
111 2 _ |a International Emergent Memory Symposium
|g IEMS
|c Ji'an
|d 2018-08-31 - 2018-09-02
|w China
245 _ _ |a Mechanisms Design strategies for memristors: materials’ properties – nanoscale processes – device performance
260 _ _ |c 2018
336 7 _ |a Conference Paper
|0 33
|2 EndNote
336 7 _ |a Other
|2 DataCite
336 7 _ |a INPROCEEDINGS
|2 BibTeX
336 7 _ |a conferenceObject
|2 DRIVER
336 7 _ |a LECTURE_SPEECH
|2 ORCID
336 7 _ |a Conference Presentation
|b conf
|m conf
|0 PUB:(DE-HGF)6
|s 1548854306_26602
|2 PUB:(DE-HGF)
|x Plenary/Keynote
536 _ _ |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521)
|0 G:(DE-HGF)POF3-521
|c POF3-521
|f POF III
|x 0
909 C O |o oai:juser.fz-juelich.de:860235
|p VDB
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 0
|6 P:(DE-Juel1)131014
913 1 _ |a DE-HGF
|b Key Technologies
|l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
|1 G:(DE-HGF)POF3-520
|0 G:(DE-HGF)POF3-521
|2 G:(DE-HGF)POF3-500
|v Controlling Electron Charge-Based Phenomena
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF3
914 1 _ |y 2018
920 1 _ |0 I:(DE-Juel1)PGI-7-20110106
|k PGI-7
|l Elektronische Materialien
|x 0
920 1 _ |0 I:(DE-82)080009_20140620
|k JARA-FIT
|l JARA-FIT
|x 1
980 _ _ |a conf
980 _ _ |a VDB
980 _ _ |a I:(DE-Juel1)PGI-7-20110106
980 _ _ |a I:(DE-82)080009_20140620
980 _ _ |a UNRESTRICTED

LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21