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@ARTICLE{Ishida:860516,
      author       = {Ishida, H. and Wortmann, D.},
      title        = {{R}elationship between embedding-potential eigenvalues and
                      topological invariants of time-reversal invariant band
                      insulators},
      journal      = {Physical review / B},
      volume       = {93},
      number       = {11},
      issn         = {2469-9950},
      address      = {Woodbury, NY},
      publisher    = {Inst.},
      reportid     = {FZJ-2019-01252},
      pages        = {115415},
      year         = {2016},
      abstract     = {The embedding potential defined on the boundary surface of
                      a semi-infinite crystal relates the value and normal
                      derivative of generalized Bloch states propagating or
                      decaying toward the interior of the crystal. It becomes
                      Hermitian when the electron energy ε is located in a
                      projected bulk band gap at a given wave vector k in the
                      surface Brillouin zone (SBZ). If one plots the real
                      eigenvalues of the embedding potential for a time-reversal
                      invariant insulator in the projected bulk band gap along a
                      path ε=ε0(k) passing between two time-reversal invariant
                      momentum (TRIM) points in the SBZ, then, they form Kramers
                      doublets at both end points. We will demonstrate that the Z2
                      topological invariant, ν, which is either 0 or 1, depending
                      on the product of time-reversal polarizations at the two
                      TRIM points, can be determined from the two different ways
                      these eigenvalues are connected between the two TRIM points.
                      Furthermore, we will reveal a relation, ν=P mod 2, where P
                      denotes the number of poles that the embedding potential
                      exhibits along the path. We also discuss why gapless surface
                      states crossing the bulk band gap inevitably occur on the
                      surface of topological band insulators from the view point
                      of the embedding theory.},
      cin          = {IAS-1 / PGI-1 / JARA-FIT / JARA-HPC},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106 /
                      $I:(DE-82)080009_20140620$ / $I:(DE-82)080012_20140620$},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000371734800007},
      doi          = {10.1103/PhysRevB.93.115415},
      url          = {https://juser.fz-juelich.de/record/860516},
}