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@ARTICLE{Ratajczak:860612,
      author       = {Ratajczak, Albert and von der Ahe, Martina and Du, Hongchu
                      and Mussler, Gregor and Grützmacher, Detlev},
      title        = {{M}etal organic vapor phase epitaxy of $$\hbox
                      {{G}e}_{1}\hbox {{S}b}_{2}\hbox {{T}e}_{4}$$ {G}e 1 {S}b 2
                      {T}e 4 thin films on {S}i(111) substrate},
      journal      = {Applied physics / A Materials science $\&$ processing A},
      volume       = {125},
      number       = {3},
      issn         = {1432-0630},
      address      = {New York},
      publisher    = {Springer},
      reportid     = {FZJ-2019-01288},
      pages        = {163},
      year         = {2019},
      abstract     = {Metal organic vapor phase epitaxy was employed for the
                      growth of homogeneous and coalesced Ge1Sb2Te4 thin films on
                      Si(111) substrate. The influence of substrate pre-annealing
                      on the layer morphology and composition was investigated.
                      The annealing in H2 atmosphere in the presence of Te is
                      important for the deposition of smooth layers. Te atoms
                      passivate Si surface and support van der Waals epitaxy. The
                      growth starts with van der Waals gap followed directly by
                      Ge1Sb2Te4 layer. The morphology of epitaxial material is
                      sensitive to the gas velocity in the reactor during growth.
                      Measured by atomic force microscope, root mean square
                      roughness of grown Ge1Sb2Te4 layers decreases significantly
                      when the total gas flow in the reactor increases from 2100
                      to 2500 sccm. The layer composition depends strongly on the
                      growth temperature. X-ray diffraction and energy dispersive
                      X-ray spectroscopy confirm that the composition of the
                      material shifts toward lower Ge content with the increase of
                      the growth temperature. The material of the interest, its
                      composition as well as surface morphology, exhibits high
                      sensitivity to the growth conditions.},
      cin          = {PGI-9 / ER-C-2 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)ER-C-2-20170209 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {523 - Controlling Configuration-Based Phenomena (POF3-523)
                      / DFG project 167917811 - SFB 917: Resistiv schaltende
                      Chalkogenide für zukünftige Elektronikanwendungen:
                      Struktur, Kinetik und Bauelementskalierung "Nanoswitches"
                      (167917811)},
      pid          = {G:(DE-HGF)POF3-523 / G:(GEPRIS)167917811},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000457830500009},
      doi          = {10.1007/s00339-019-2465-4},
      url          = {https://juser.fz-juelich.de/record/860612},
}