TY  - JOUR
AU  - Han, Qinghua
AU  - Tromm, Thomas C. U.
AU  - Hoffmann, Michael
AU  - Aleksa, Paulus
AU  - Schroeder, Uwe
AU  - Schubert, Juergen
AU  - Mantl, Siegfried
AU  - Zhao, Qing-Tai
TI  - Subthreshold Behavior of Floating-Gate MOSFETs With Ferroelectric Capacitors531
JO  - IEEE transactions on electron devices
VL  - 65
IS  - 10
SN  - 1557-9646
CY  - New York, NY
PB  - IEEE
M1  - FZJ-2019-01294
SP  - 4641 - 4645
PY  - 2018
AB  - The subthreshold behavior of floating-gate MOSFETs connected with ferroelectric capacitors (FeCs) was investigated experimentally and theoretically. We found that the subthreshold swing (SS) decreases with decreasing ferroelectric capacitance (i.e., with the decreasing FeC area), in contrast to the voltage dividing effect of regular dielectric capacitors. The ferroelectric polarization switching counteracts the effect of voltage dividing by introducing an additional charge onto the floating gate, which improves the SS and leads to the observed SS dependence. The SS improvement caused by the polarization switching is different from the negative capacitance effect, which is helpful to further understand the ferroelectric transistor.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000445239700084
DO  - DOI:10.1109/TED.2018.2863727
UR  - https://juser.fz-juelich.de/record/860621
ER  -