000860915 001__ 860915
000860915 005__ 20210130000654.0
000860915 037__ $$aFZJ-2019-01567
000860915 041__ $$aEnglish
000860915 1001_ $$0P:(DE-Juel1)165997$$aGlass, Stefan$$b0$$eCorresponding author
000860915 245__ $$aSi/SiGe-Based Gate-Normal Tunneling Field-Effect Transistors$$f - 2018-06-30
000860915 260__ $$c2019
000860915 300__ $$a129
000860915 3367_ $$2DataCite$$aOutput Types/Dissertation
000860915 3367_ $$2ORCID$$aDISSERTATION
000860915 3367_ $$2BibTeX$$aPHDTHESIS
000860915 3367_ $$02$$2EndNote$$aThesis
000860915 3367_ $$0PUB:(DE-HGF)11$$2PUB:(DE-HGF)$$aDissertation / PhD Thesis$$bphd$$mphd$$s1550742410_32623
000860915 3367_ $$2DRIVER$$adoctoralThesis
000860915 502__ $$aDissertation, RWTH Aachen, 2019$$bDissertation$$cRWTH Aachen$$d2019$$o2019-01-30
000860915 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000860915 909CO $$ooai:juser.fz-juelich.de:860915$$pVDB
000860915 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)165997$$aForschungszentrum Jülich$$b0$$kFZJ
000860915 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000860915 9141_ $$y2019
000860915 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000860915 980__ $$aphd
000860915 980__ $$aVDB
000860915 980__ $$aI:(DE-Juel1)PGI-9-20110106
000860915 980__ $$aUNRESTRICTED