Hauptseite > Publikationsdatenbank > Si/SiGe-Based Gate-Normal Tunneling Field-Effect Transistors > RIS |
TY - THES AU - Glass, Stefan TI - Si/SiGe-Based Gate-Normal Tunneling Field-Effect Transistors PB - RWTH Aachen VL - Dissertation M1 - FZJ-2019-01567 SP - 129 PY - 2019 N1 - Dissertation, RWTH Aachen, 2019 LB - PUB:(DE-HGF)11 UR - https://juser.fz-juelich.de/record/860915 ER -