Hauptseite > Publikationsdatenbank > Ferroelectricity of doped HfO2 for Negative-Capacitance Transistors > print

001     860916
005     20210130000654.0
037 _ _ |a FZJ-2019-01568
100 1 _ |a Aleksa, Paulus
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|e Corresponding author
245 _ _ |a Ferroelectricity of doped HfO2 for Negative-Capacitance Transistors
|f - 2018-09-30
260 _ _ |c 2018
300 _ _ |a 54
336 7 _ |a Output Types/Supervised Student Publication
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336 7 _ |a Thesis
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336 7 _ |a MASTERSTHESIS
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336 7 _ |a SUPERVISED_STUDENT_PUBLICATION
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502 _ _ |a Masterarbeit, Heinrich-Heine University Düsseldorf, 2018
|c Heinrich-Heine University Düsseldorf
|b Masterarbeit
|d 2018
|o 2018-09-14
536 _ _ |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521)
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910 1 _ |a Forschungszentrum Jülich
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914 1 _ |y 2019
920 1 _ |0 I:(DE-Juel1)PGI-9-20110106
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980 _ _ |a UNRESTRICTED

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