000861107 001__ 861107
000861107 005__ 20210130000718.0
000861107 0247_ $$2doi$$a10.1109/TED.2019.2892997
000861107 0247_ $$2ISSN$$a0018-9383
000861107 0247_ $$2ISSN$$a0096-2430
000861107 0247_ $$2ISSN$$a0197-6370
000861107 0247_ $$2ISSN$$a1557-9646
000861107 0247_ $$2ISSN$$a2379-8653
000861107 0247_ $$2ISSN$$a2379-8661
000861107 0247_ $$2WOS$$aWOS:000460970400020
000861107 037__ $$aFZJ-2019-01672
000861107 082__ $$a620
000861107 1001_ $$00000-0003-1874-9864$$aLa Torre, Camilla$$b0$$eCorresponding author
000861107 245__ $$aCompact Modeling of Complementary Switching in Oxide-Based ReRAM Devices
000861107 260__ $$aNew York, NY$$bIEEE$$c2019
000861107 3367_ $$2DRIVER$$aarticle
000861107 3367_ $$2DataCite$$aOutput Types/Journal article
000861107 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1582019274_521
000861107 3367_ $$2BibTeX$$aARTICLE
000861107 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000861107 3367_ $$00$$2EndNote$$aJournal Article
000861107 520__ $$aPhysics-based compact models for redox-based resistive switching memory (ReRAM) devices are used to increase the physical understanding of the complex switching process as well as to allow for accurate circuit simulations. This includes that models have to cover devices showing bipolar switching (BS) and complementary switching (CS). In contrast to BS devices, which store the information in (at least) one high and one low resistance state, CS devices use (at least) two high resistance states. Applications of CS devices range from passive crossbar arrays to novel logic-in-memory concepts. The coexistence of CS and BS modes in one device has been shown experimentally. Here, a physics-based compact model describing BS and CS consistently is presented. Besides modeling CS devices, the model improves the description of BS as it allows to reproduce and explain anomalies in the BS RESET process. The model includes ion drift and diffusion along the filament. The influence of different parameters on the drift–diffusion balance is discussed.
000861107 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000861107 588__ $$aDataset connected to CrossRef
000861107 7001_ $$00000-0002-8179-9605$$aZurhelle, Alexander F.$$b1
000861107 7001_ $$0P:(DE-Juel1)157669$$aBreuer, Thomas$$b2
000861107 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b3
000861107 7001_ $$0P:(DE-Juel1)158062$$aMenzel, Stephan$$b4
000861107 773__ $$0PERI:(DE-600)2028088-9$$a10.1109/TED.2019.2892997$$gp. 1 - 8$$n3$$p1268 - 1275$$tIEEE transactions on electron devices$$v66$$x1557-9646$$y2019
000861107 8564_ $$uhttps://juser.fz-juelich.de/record/861107/files/08630083.pdf$$yRestricted
000861107 8564_ $$uhttps://juser.fz-juelich.de/record/861107/files/08630083.pdf?subformat=pdfa$$xpdfa$$yRestricted
000861107 909CO $$ooai:juser.fz-juelich.de:861107$$pVDB
000861107 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)131022$$aForschungszentrum Jülich$$b3$$kFZJ
000861107 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)158062$$aForschungszentrum Jülich$$b4$$kFZJ
000861107 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000861107 9141_ $$y2019
000861107 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bIEEE T ELECTRON DEV : 2017
000861107 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000861107 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000861107 915__ $$0StatID:(DE-HGF)0600$$2StatID$$aDBCoverage$$bEbsco Academic Search
000861107 915__ $$0StatID:(DE-HGF)0030$$2StatID$$aPeer Review$$bASC
000861107 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bClarivate Analytics Master Journal List
000861107 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000861107 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000861107 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000861107 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology
000861107 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000861107 9201_ $$0I:(DE-Juel1)PGI-7-20110106$$kPGI-7$$lElektronische Materialien$$x0
000861107 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1
000861107 9201_ $$0I:(DE-Juel1)PGI-10-20170113$$kPGI-10$$lJARA Institut Green IT$$x2
000861107 980__ $$ajournal
000861107 980__ $$aVDB
000861107 980__ $$aI:(DE-Juel1)PGI-7-20110106
000861107 980__ $$aI:(DE-82)080009_20140620
000861107 980__ $$aI:(DE-Juel1)PGI-10-20170113
000861107 980__ $$aUNRESTRICTED