% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{LaTorre:861107,
      author       = {La Torre, Camilla and Zurhelle, Alexander F. and Breuer,
                      Thomas and Waser, R. and Menzel, Stephan},
      title        = {{C}ompact {M}odeling of {C}omplementary {S}witching in
                      {O}xide-{B}ased {R}e{RAM} {D}evices},
      journal      = {IEEE transactions on electron devices},
      volume       = {66},
      number       = {3},
      issn         = {1557-9646},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2019-01672},
      pages        = {1268 - 1275},
      year         = {2019},
      abstract     = {Physics-based compact models for redox-based resistive
                      switching memory (ReRAM) devices are used to increase the
                      physical understanding of the complex switching process as
                      well as to allow for accurate circuit simulations. This
                      includes that models have to cover devices showing bipolar
                      switching (BS) and complementary switching (CS). In contrast
                      to BS devices, which store the information in (at least) one
                      high and one low resistance state, CS devices use (at least)
                      two high resistance states. Applications of CS devices range
                      from passive crossbar arrays to novel logic-in-memory
                      concepts. The coexistence of CS and BS modes in one device
                      has been shown experimentally. Here, a physics-based compact
                      model describing BS and CS consistently is presented.
                      Besides modeling CS devices, the model improves the
                      description of BS as it allows to reproduce and explain
                      anomalies in the BS RESET process. The model includes ion
                      drift and diffusion along the filament. The influence of
                      different parameters on the drift–diffusion balance is
                      discussed.},
      cin          = {PGI-7 / JARA-FIT / PGI-10},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-10-20170113},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000460970400020},
      doi          = {10.1109/TED.2019.2892997},
      url          = {https://juser.fz-juelich.de/record/861107},
}